18314147. MEMORY DEVICE INCLUDING ERROR CORRECTION DEVICE simplified abstract (SK hynix Inc.)

From WikiPatents
Jump to navigation Jump to search

MEMORY DEVICE INCLUDING ERROR CORRECTION DEVICE

Organization Name

SK hynix Inc.

Inventor(s)

Jin Ho Jeong of Gyeonggi-do (KR)

Dae Suk Kim of Gyeonggi-do (KR)

Sang Woo Yoon of Gyeonggi-do (KR)

A Ram Rim of Gyeonggi-do (KR)

Mun Seon Jang of Gyeonggi-do (KR)

MEMORY DEVICE INCLUDING ERROR CORRECTION DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18314147 titled 'MEMORY DEVICE INCLUDING ERROR CORRECTION DEVICE

Simplified Explanation

The memory device described in the patent application includes a memory cell area with different types of cell blocks, an error correction circuit, and switch groups for data processing and transfer operations.

  • The memory cell area is divided into normal cell blocks, ECC cell blocks, and redundancy cell blocks, each responsible for outputting data and error correction codes.
  • The error correction circuit corrects errors in the data using the error correction codes to generate error-corrected data.
  • The first switch group performs a shifting operation on the error-corrected data according to repair control information before outputting it.
  • The second switch group transfers data from the memory cell area to the error correction circuit, performing a zero-padding operation on the data from one of the cell blocks based on repair control information.

Potential Applications

This technology could be applied in:

  • Data storage devices
  • Communication systems
  • Embedded systems

Problems Solved

  • Error correction in memory devices
  • Efficient data processing and transfer operations

Benefits

  • Improved data reliability
  • Enhanced error correction capabilities
  • Optimal data transfer efficiency

Potential Commercial Applications

Optimized Memory Data Processing and Transfer Technology

Possible Prior Art

Prior art in memory devices with error correction capabilities and data processing mechanisms may exist, but specific examples are not provided in this patent application.

Unanswered Questions

How does the shifting operation in the first switch group improve data processing efficiency?

The shifting operation in the first switch group helps in aligning the error-corrected data properly before outputting it, ensuring accurate and efficient data processing.

What is the significance of the zero-padding operation performed by the second switch group?

The zero-padding operation in the second switch group ensures that the data output from the cell blocks is properly formatted for error correction and transfer, enhancing overall data integrity and reliability.


Original Abstract Submitted

A memory device includes a memory cell area including a plurality of cell blocks divided into a plurality of normal cell blocks, at least one ECC cell block, and at least one redundancy cell block, the plurality of cell blocks being configured to output data and error correction codes; an error correction circuit configured to generate error-corrected data by correcting errors in the data using the error correction codes; a first switch group configured to output the error-corrected data while performing, according to first repair control information, a shifting operation on the error-corrected data; and a second switch group configured to transfer the data from the memory cell area to the error correction circuit while performing, according to second repair control information, a zero-padding operation on the data output from one of the cell blocks.