18310369. SCHOTTKY BARRIER DIODE (SBD) LEAKAGE CURRENT BLOCKING STRUCTURE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
Contents
- 1 SCHOTTKY BARRIER DIODE (SBD) LEAKAGE CURRENT BLOCKING STRUCTURE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SCHOTTKY BARRIER DIODE (SBD) LEAKAGE CURRENT BLOCKING STRUCTURE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.9.1 Unanswered Questions
- 1.9.2 How does the current blockage feature in the SBD structure compare to other methods of preventing current leakage?
- 1.9.3 What specific electronic devices or systems could benefit the most from the improved performance and reliability of the SBD structure described in the patent application?
- 1.10 Original Abstract Submitted
SCHOTTKY BARRIER DIODE (SBD) LEAKAGE CURRENT BLOCKING STRUCTURE
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Cheng-Hsien Wu of Hsinchu (TW)
Chien-Lin Tseng of Zhubei (TW)
Ting-Chang Chang of Hsinchu (TW)
SCHOTTKY BARRIER DIODE (SBD) LEAKAGE CURRENT BLOCKING STRUCTURE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18310369 titled 'SCHOTTKY BARRIER DIODE (SBD) LEAKAGE CURRENT BLOCKING STRUCTURE
Simplified Explanation
The abstract describes a patent application for a Schottky barrier diode (SBD) structure with a current blockage feature to prevent current leakage at the interface with shallow trench isolation regions surrounding the anode region.
- The SBD structure includes a current blockage feature to inhibit current leakage at the interface with shallow trench isolation regions.
- The current blockage feature helps maintain the integrity of the SBD structure by preventing unwanted current flow.
- The SBD structure is designed to improve performance and reliability by reducing current leakage issues.
Potential Applications
The technology described in this patent application could be applied in various electronic devices and systems where Schottky barrier diodes are used, such as power supplies, rectifiers, and RF circuits.
Problems Solved
This technology addresses the issue of current leakage at the interface of the SBD structure with shallow trench isolation regions, which can lead to performance degradation and reliability issues in electronic devices.
Benefits
The current blockage feature in the SBD structure helps improve the overall performance and reliability of electronic devices by preventing current leakage and maintaining the integrity of the diode structure.
Potential Commercial Applications
The technology could be valuable in the semiconductor industry for the production of high-performance electronic devices with improved reliability and efficiency.
Possible Prior Art
One possible prior art could be the use of other methods to prevent current leakage in Schottky barrier diodes, such as different isolation techniques or materials.
Unanswered Questions
How does the current blockage feature in the SBD structure compare to other methods of preventing current leakage?
The article does not provide a direct comparison between the current blockage feature and other methods of preventing current leakage in Schottky barrier diodes.
What specific electronic devices or systems could benefit the most from the improved performance and reliability of the SBD structure described in the patent application?
The article does not specify which electronic devices or systems could benefit the most from the technology described.
Original Abstract Submitted
Embodiments include a Schottky barrier diode (SBD) structure and method of forming the same, the SBD structure including a current blockage feature to inhibit current from leaking at an interface with a shallow trench isolation regions surrounding an anode region of the SBD structure.
