18309144. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Deoksung Hwang of Suwon-si (KR)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18309144 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation
- A semiconductor device includes bit line structures, insulation structures, and landing pad structures. - The landing pad structure consists of a first barrier metal pattern, a second barrier metal pattern, and a first metal pattern. - The second barrier metal pattern has end portions on the bit line structures adjacent to the opening. - The first metal pattern has an upper surface higher than the bit line structure. - The uppermost surface of the first barrier metal pattern is lower than the lowermost surface of the first metal pattern.
Potential Applications
This technology could be used in the manufacturing of advanced semiconductor devices such as memory chips and processors.
Problems Solved
This technology helps in improving the efficiency and performance of semiconductor devices by providing a reliable and efficient landing pad structure.
Benefits
- Enhanced reliability and performance of semiconductor devices. - Improved manufacturing process for semiconductor devices. - Increased efficiency in data storage and processing.
Original Abstract Submitted
A semiconductor device may include bit line structures extending in one direction on a substrate, insulation structures between the bit line structures and spaced apart from each other, and a landing pad structure in each of openings between the bit line structures and the insulation structures. The landing pad structure may include a first barrier metal pattern filling a portion of the opening, a second barrier metal pattern along a surface profile of the opening on the first barrier metal pattern, and a first metal pattern on the second barrier metal pattern. The second barrier metal pattern may have end portions on the bit line structures adjacent the opening. The first metal pattern may have an upper surface higher than an upper surface of the bit line structure. An uppermost surface of the first barrier metal pattern is lower than a lowermost surface of the first metal pattern.
