18308393. SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
Organization Name
Inventor(s)
HYUNMOOK Choi of SUWON-SI (KR)
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18308393 titled 'SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
Simplified Explanation
The abstract describes a method of manufacturing a semiconductor device. It involves the formation of an insulation layer and a first gate electrode layer alternately and repeatedly on a substrate in a perpendicular direction to the substrate's upper surface, creating a mold layer. The first gate electrode layer is made of silicon doped with impurities of a first conductivity type. An opening is formed through the mold layer to expose the substrate's upper surface. Portions of the first gate electrode layers adjacent to the opening are removed, creating gaps. Horizontal channels are formed in these gaps, each containing silicon doped with impurities of a second conductivity type. A vertical gate structure is formed in the opening, extending in the perpendicular direction. A memory channel structure is also formed through the mold layer to contact the substrate's upper surface.
- The method involves the alternating formation of an insulation layer and a first gate electrode layer on a substrate to create a mold layer.
- The first gate electrode layer is made of silicon doped with impurities of a first conductivity type.
- An opening is formed through the mold layer, exposing the substrate's upper surface.
- Portions of the first gate electrode layers adjacent to the opening are removed, creating gaps.
- Horizontal channels are formed in the gaps, each containing silicon doped with impurities of a second conductivity type.
- A vertical gate structure is formed in the opening, extending in a perpendicular direction.
- A memory channel structure is formed through the mold layer, contacting the substrate's upper surface.
Potential Applications
- This method can be used in the manufacturing of semiconductor devices, such as memory chips or microprocessors.
Problems Solved
- The method allows for the precise formation of gate structures and channels in a semiconductor device, improving its performance and functionality.
- It provides a way to create vertical gate structures, which can enhance the integration density of the device.
Benefits
- The alternating formation of insulation and gate electrode layers allows for the creation of a mold layer, providing a stable foundation for subsequent processes.
- The use of doped silicon in the gate electrode layers and channels enables the control of conductivity and enhances the device's functionality.
- The formation of vertical gate structures and memory channel structures improves the integration density and performance of the semiconductor device.
Original Abstract Submitted
In a method of manufacturing a semiconductor device, an insulation layer and a first gate electrode layer are alternately and repeatedly formed on a substrate in a first direction perpendicular to an upper surface of the substrate to form a mold layer. The first gate electrode layer includes silicon doped with impurities having a first conductivity type. An opening is formed through the mold layer to expose the upper surface of the substrate. Portions of the first gate electrode layers adjacent to the opening are removed to form gaps, respectively. Horizontal channels are formed in the gaps, respectively. Each of the horizontal channels includes silicon doped with impurities having a second conductivity type. A vertical gate structure extending in the first direction is formed in the opening. A memory channel structure is formed through the mold layer to contact the upper surface of the substrate.
