18308262. SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
Contents
SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME
Organization Name
Inventor(s)
Dongsung Choi of Suwon-si (KR)
Changheon Cheon of Suwon-si (KR)
SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18308262 titled 'SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME
Simplified Explanation
The semiconductor device described in the patent application includes various patterns and films to improve its performance and efficiency. Here is a simplified explanation of the abstract:
- Conductive pattern
- Insulating pattern
- Channel film in vertical direction inside channel hole
- Charge trap pattern between conductive pattern and channel film
- Tunneling dielectric film between charge trap pattern and channel film
- Blocking dielectric film between conductive pattern and charge trap pattern, and between insulating pattern and tunneling dielectric film
- First insulating pattern overlapping conductive pattern vertically
- Second insulating pattern protruding laterally from first insulating pattern into channel hole towards channel film
- First insulating pattern with higher dielectric constant than second insulating pattern
Potential applications of this technology:
- Semiconductor devices
- Integrated circuits
- Memory devices
- Microprocessors
Problems solved by this technology:
- Improved performance and efficiency of semiconductor devices
- Enhanced charge trapping capabilities
- Better control of electrical properties
Benefits of this technology:
- Higher functionality in semiconductor devices
- Increased reliability and stability
- Enhanced data storage capabilities
Original Abstract Submitted
A semiconductor device includes a conductive pattern, an insulating pattern, a channel film extending in a vertical direction inside a channel hole, a charge trap pattern between the conductive pattern and the channel film inside the channel hole, a tunneling dielectric film between the charge trap pattern and the channel film, and a blocking dielectric film extending between the conductive pattern and the charge trap pattern and between the insulating pattern and the tunneling dielectric film. The insulating pattern includes a first insulating pattern overlapping the conductive pattern in the vertical direction and a second insulating pattern protruding in the lateral direction from the first insulating pattern into the channel hole and toward the channel film. The first insulating pattern has a first dielectric constant, and the second insulating pattern has a second dielectric constant that is lower than the first dielectric constant.
