18308036. COMPOSITE PARTICULATES FOR USE AS PART OF A SUPPORTING FILL MIXTURE IN A SEMICONDUTOR SUBSTRATE STACKING APPLICATION simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)

COMPOSITE PARTICULATES FOR USE AS PART OF A SUPPORTING FILL MIXTURE IN A SEMICONDUTOR SUBSTRATE STACKING APPLICATION

Organization Name

Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor(s)

Kuo-Ming Wu of Zhubei City (TW)

Hau-Yi Hsiao of Chiayi City (TW)

Kai-Yun Yang of Tainan City (TW)

Che Wei Yang of New Taipei City (TW)

Sheng-Chau Chen of Tainan City (TW)

Chung-Yi Yu of Hsin-Chu (TW)

Cheng-Yuan Tsai of Chu-Pei City (TW)

COMPOSITE PARTICULATES FOR USE AS PART OF A SUPPORTING FILL MIXTURE IN A SEMICONDUTOR SUBSTRATE STACKING APPLICATION - A simplified explanation of the abstract

This abstract first appeared for US patent application 18308036 titled 'COMPOSITE PARTICULATES FOR USE AS PART OF A SUPPORTING FILL MIXTURE IN A SEMICONDUTOR SUBSTRATE STACKING APPLICATION

Simplified Explanation

Some implementations described herein include systems and techniques for fabricating a stacked die product. The systems and techniques include using a supporting fill mixture that includes a combination of types of composite particulates in a lateral gap region of a stack of semiconductor substrates and along a perimeter region of the stack of semiconductor substrates. One type of composite particulate included in the combination may be a relatively smaller size and include a smooth surface, allowing the composite particulate to ingress deep into the lateral gap region. Properties of the supporting fill mixture including the combination of types of composite particulates may control thermally induced stresses during downstream manufacturing to reduce a likelihood of defects in the supporting fill mixture and/or the stack of semiconductor substrates.

• Using a supporting fill mixture with a combination of composite particulates helps reduce thermally induced stresses during manufacturing.
• The composite particulates have different sizes and surface properties to fill gaps effectively.
• This technology aims to minimize defects in the stacked die product during fabrication.

Potential Applications

The technology can be applied in the semiconductor industry for fabricating stacked die products with improved structural integrity and reduced defects.

Problems Solved

1. Reduction of thermally induced stresses during manufacturing. 2. Minimization of defects in the supporting fill mixture and the stack of semiconductor substrates.

Benefits

1. Enhanced structural integrity of stacked die products. 2. Improved reliability and performance of semiconductor devices. 3. Cost-effective manufacturing process.

Potential Commercial Applications

Optimizing the fabrication process of stacked die products in the semiconductor industry for improved product quality and performance.

Possible Prior Art

Prior art related to using composite particulates in supporting fill mixtures for semiconductor substrate stacking processes may exist, but specific examples are not provided in this abstract.

How does this technology compare to traditional methods of fabricating stacked die products in terms of cost-effectiveness and efficiency?

This article does not provide a direct comparison between this technology and traditional methods in terms of cost-effectiveness and efficiency. Further research or detailed analysis would be needed to address this question.

What are the specific types of defects that can be minimized by using the supporting fill mixture with a combination of composite particulates?

The abstract mentions reducing the likelihood of defects, but it does not specify the types of defects that can be minimized. Additional information or data would be required to answer this question accurately.

Original Abstract Submitted

Some implementations described herein include systems and techniques for fabricating a stacked die product. The systems and techniques include using a supporting fill mixture that includes a combination of types of composite particulates in a lateral gap region of a stack of semiconductor substrates and along a perimeter region of the stack of semiconductor substrates. One type of composite particulate included in the combination may be a relatively smaller size and include a smooth surface, allowing the composite particulate to ingress deep into the lateral gap region. Properties of the supporting fill mixture including the combination of types of composite particulates may control thermally induced stresses during downstream manufacturing to reduce a likelihood of defects in the supporting fill mixture and/or the stack of semiconductor substrates.