18308026. DIELECTRIC GAS SPACER FORMATION FOR REDUCING PARASITIC CAPACITANCE IN A TRANSISTOR INCLUDING NANOSHEET STRUCTURES simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)

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DIELECTRIC GAS SPACER FORMATION FOR REDUCING PARASITIC CAPACITANCE IN A TRANSISTOR INCLUDING NANOSHEET STRUCTURES

Organization Name

Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor(s)

Chih-Hao Chang of Hsinchu City (TW)

Cheng-Yi Peng of Taipei City (TW)

Wei-Yang Lee of Taipei City (TW)

Chia-Pin Lin of Xinpu Township (TW)

DIELECTRIC GAS SPACER FORMATION FOR REDUCING PARASITIC CAPACITANCE IN A TRANSISTOR INCLUDING NANOSHEET STRUCTURES - A simplified explanation of the abstract

This abstract first appeared for US patent application 18308026 titled 'DIELECTRIC GAS SPACER FORMATION FOR REDUCING PARASITIC CAPACITANCE IN A TRANSISTOR INCLUDING NANOSHEET STRUCTURES

Simplified Explanation: This patent application describes a semiconductor device with a gate-all-around transistor that includes dielectric regions to reduce parasitic capacitance.

  • The semiconductor device includes a gate-all-around transistor with dielectric regions containing dielectric gases.
  • The dielectric regions reduce parasitic capacitance in the transistor.
  • By including dielectric regions, the device's performance is improved compared to traditional transistors without dielectric regions.

Key Features and Innovation:

  • Gate-all-around transistor with dielectric regions.
  • Dielectric regions reduce parasitic capacitance.
  • Improved performance compared to traditional transistors.

Potential Applications: The technology can be applied in various semiconductor devices requiring high performance and reduced parasitic capacitance.

Problems Solved: The technology addresses the issue of parasitic capacitance in semiconductor devices, improving overall performance.

Benefits:

  • Enhanced performance in semiconductor devices.
  • Reduction in parasitic capacitance.
  • Improved efficiency and reliability.

Commercial Applications: Potential commercial applications include high-performance computing, telecommunications, and consumer electronics markets.

Prior Art: Readers can explore prior research on gate-all-around transistors and dielectric regions in semiconductor devices to understand the evolution of this technology.

Frequently Updated Research: Researchers are continually exploring ways to further optimize dielectric regions in semiconductor devices for improved performance and efficiency.

Questions about Semiconductor Device with Dielectric Regions: 1. How do dielectric regions in the gate-all-around transistor reduce parasitic capacitance? 2. What are the potential long-term implications of integrating dielectric regions in semiconductor devices?


Original Abstract Submitted

Some implementations described herein provide a semiconductor device and methods of formation. The semiconductor device includes a gate-all-around transistor having one or more dielectric regions that include or more dielectric gases. The dielectric regions may include a first dielectric region between epitaxial regions (e.g., source/drain regions) and a first portion of a gate structure of the gate-all-around transistor. The dielectric regions may further include a second dielectric region between a contact structure of gate-all-around transistor and a second portion of the gate structure. By including the dielectric regions in the gate-all-around transistor, a parasitic capacitance associated with the gate-all-around transistor may be reduced relative to another gate-all-around transistor not including the dielectric regions.

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