18307816. SEMICONDUCTOR DEVICE INCLUDING BONDING PAD simplified abstract (SK hynix Inc.)

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SEMICONDUCTOR DEVICE INCLUDING BONDING PAD

Organization Name

SK hynix Inc.

Inventor(s)

Byung Ho Lee of Gyeonggi-do (KR)

SEMICONDUCTOR DEVICE INCLUDING BONDING PAD - A simplified explanation of the abstract

This abstract first appeared for US patent application 18307816 titled 'SEMICONDUCTOR DEVICE INCLUDING BONDING PAD

Simplified Explanation

The semiconductor device described in the abstract consists of a lower semiconductor structure with electrode bonding pads connected to a first voltage, and an upper semiconductor structure with electrode bonding pads connected to a second voltage different from the first voltage. The bonding pads of the lower and upper structures are connected to each other.

  • Lower semiconductor structure with first lower electrode bonding pads
  • Upper semiconductor structure with first upper electrode bonding pads
  • Connection patterns for bonding pads in both structures
  • Different voltages for upper and lower structures
  • Bonding of corresponding lower and upper electrode bonding pads

Potential Applications

The technology described in this patent application could be applied in various electronic devices such as sensors, actuators, and integrated circuits.

Problems Solved

This technology helps in improving the performance and reliability of semiconductor devices by providing a stable connection between the upper and lower structures with different voltages.

Benefits

The benefits of this technology include enhanced functionality, increased efficiency, and improved overall performance of semiconductor devices.

Potential Commercial Applications

The semiconductor device described in this patent application could find applications in industries such as telecommunications, consumer electronics, automotive, and healthcare.

Possible Prior Art

One possible prior art for this technology could be the use of similar bonding pad configurations in other semiconductor devices to achieve specific electrical connections.

What are the specific voltages used in the lower and upper structures of the semiconductor device?

The specific voltages used in the lower and upper structures of the semiconductor device are not mentioned in the abstract. Further details would be needed to determine the exact voltages applied.

How does the connection pattern ensure a stable connection between the bonding pads of the lower and upper semiconductor structures?

The abstract does not provide detailed information on how the connection pattern ensures a stable connection between the bonding pads of the lower and upper semiconductor structures. Additional information on the design and materials used in the connection pattern would be necessary to answer this question accurately.


Original Abstract Submitted

A semiconductor device includes: a lower semiconductor structure including a plurality of first lower electrode bonding pads, a plurality of second lower electrode bonding pads, and a lower connection pattern connecting the plurality of first lower electrode bonding pads to each other while being connected to a first voltage; and an upper semiconductor structure disposed over the lower semiconductor structure and including a plurality of first upper electrode bonding pads, a plurality of second upper electrode bonding pads, and an upper connection pattern connecting the plurality of second upper electrode bonding pads to each other while being connected to a second voltage different from the first voltage, wherein the plurality of first lower electrode bonding pads are bonded to the plurality of first upper electrode bonding pads, respectively, and the plurality of second lower electrode bonding pads are bonded to the plurality of second upper electrode bonding pads, respectively.