18307165. CAP LAYER FOR PAD OXIDATION PREVENTION simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
Contents
CAP LAYER FOR PAD OXIDATION PREVENTION
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Harry-Haklay Chuang of Zhubei City (TW)
Wei-Cheng Wu of Zhubei City (TW)
Chih-Peng Tsai of Changhua County (TW)
CAP LAYER FOR PAD OXIDATION PREVENTION - A simplified explanation of the abstract
This abstract first appeared for US patent application 18307165 titled 'CAP LAYER FOR PAD OXIDATION PREVENTION
Simplified Explanation: The patent application describes a semiconductor structure with an enhanced cap layer for pad oxidation prevention, allowing for testing without the need to expose the interconnect pad.
Key Features and Innovation:
- Semiconductor structure with enhanced cap layer for pad oxidation prevention
- Soft cap layer allows for testing without forming a pad opening
- Cap layer separates etch stop layer from interconnect pad
Potential Applications: This technology can be used in the manufacturing of integrated circuit (IC) dies to prevent pad oxidation and facilitate testing processes.
Problems Solved: This technology addresses the issue of pad oxidation in semiconductor structures and simplifies the testing process by eliminating the need to expose the interconnect pad.
Benefits:
- Improved reliability of semiconductor structures
- Simplified testing procedures
- Enhanced efficiency in IC die manufacturing
Commercial Applications: Potential commercial applications include semiconductor manufacturing companies, IC die producers, and companies involved in the testing and quality control of semiconductor devices.
Prior Art: Readers can explore prior art related to semiconductor structure design, cap layers, and pad oxidation prevention in the field of semiconductor technology.
Frequently Updated Research: Stay updated on advancements in semiconductor structure design, cap layer materials, and testing methods in the semiconductor industry.
Questions about Semiconductor Structure with Enhanced Cap Layer: 1. What are the key advantages of using a soft cap layer in semiconductor structures? 2. How does the enhanced cap layer prevent pad oxidation in IC dies?
Original Abstract Submitted
Various embodiments of the present disclosure are directed towards a semiconductor structure (e.g., an integrated circuit (IC) die) comprising an enhanced cap layer for pad oxidation prevention, as well as a method for forming the IC die. An interconnect pad overlies a substrate at a top of an interconnect structure, and a bond structure overlies and extends from a surface of the interconnect pad. A cap layer and an etch stop layer overlie the surface around the bond structure. Further, the cap layer separates the etch stop layer from the interconnect pad and is soft. Soft may for example, refer to a hardness less than silicon nitride and/or less than the etch stop layer. Because the cap layer is soft, a probe may be pushed through the cap layer to the interconnect pad for testing without first forming a pad opening exposing the interconnect pad.
