18306654. MEMORY DEVICE simplified abstract (Kioxia Corporation)
Contents
MEMORY DEVICE
Organization Name
Inventor(s)
Takuya Futatsuyama of Yokohama Kanagawa (JP)
Kenichi Abe of Kawasaki Kanagawa (JP)
MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18306654 titled 'MEMORY DEVICE
Simplified Explanation
The memory device described in the abstract includes a semiconductor column with multiple conductive layers on different sides, connected to a bit line. Different voltages are applied to these layers during reading, with specific voltage relationships between them.
- The memory device includes a semiconductor column with multiple conductive layers on different sides.
- During reading, specific voltages are applied to each conductive layer in relation to each other.
- The voltages applied to the layers are crucial for the reading process and data retrieval.
Potential Applications
This technology could be applied in:
- High-speed memory devices
- Data storage systems
- Semiconductor industry
Problems Solved
This technology helps in:
- Improving data reading efficiency
- Enhancing memory device performance
- Increasing data storage capacity
Benefits
The benefits of this technology include:
- Faster data retrieval
- Higher memory device reliability
- Improved overall system performance
Potential Commercial Applications
The potential commercial applications of this technology could be in:
- Consumer electronics
- Computer systems
- Data centers
Possible Prior Art
One possible prior art for this technology could be:
- Memory devices with multiple conductive layers for data reading efficiency
Unanswered Questions
How does this technology compare to existing memory devices in terms of speed and efficiency?
This article does not provide a direct comparison between this technology and existing memory devices. Further research or testing may be needed to determine the specific advantages of this innovation.
What are the potential challenges in implementing this technology on a larger scale for commercial use?
The article does not address the potential challenges in scaling up this technology for commercial applications. Factors such as cost, manufacturing processes, and compatibility with existing systems could be important considerations that are not covered in the abstract.
Original Abstract Submitted
A memory device includes a semiconductor column extending above a substrate, a first conductive layer on a first side of the semiconductor column, a second conductive layer on a second side of the semiconductor column, opposite to the first conductive layer, a third conductive layer above or below the first conductive layer and on the first side of the semiconductor column, a fourth conductive layer on the second side of the semiconductor column, opposite to the third conductive layer, and a bit line connected to the semiconductor column. During reading in which a positive voltage is applied to the bit line, first, second, third, and fourth voltages applied to the first, second, third, and fourth conductive layers, respectively, wherein the first voltage and the third voltage are higher than each of the second voltage and the fourth voltage, and the third voltage is higher than the first voltage.
