18302034. SEMICONDUCTOR MEMORY DEVICES THAT SUPPORT ENHANCED DATA RECOVERY OPERATIONS simplified abstract (Samsung Electronics Co., Ltd.)
Contents
SEMICONDUCTOR MEMORY DEVICES THAT SUPPORT ENHANCED DATA RECOVERY OPERATIONS
Organization Name
Inventor(s)
Seong Geon Lee of Suwon-si (KR)
Youn-Soo Cheon of Suwon-si (KR)
SEMICONDUCTOR MEMORY DEVICES THAT SUPPORT ENHANCED DATA RECOVERY OPERATIONS - A simplified explanation of the abstract
This abstract first appeared for US patent application 18302034 titled 'SEMICONDUCTOR MEMORY DEVICES THAT SUPPORT ENHANCED DATA RECOVERY OPERATIONS
Simplified Explanation
The abstract describes a method for operating a memory device that involves reading pages of memory cells, determining a match rate between columns in different pages, and adjusting read pass voltages based on the match rate.
- Reading a first page of memory cells with at least one worn-out memory cell using a read voltage from a first memory block
- Reading a second page of memory cells adjacent to the first page in the first memory block with the same read voltage
- Determining a match rate between columns with "0" bits in the first and second pages
- Adjusting the read pass voltage for reading the second page based on the match rate exceeding a threshold
Potential applications of this technology:
- Improving memory device performance by adjusting read pass voltages based on match rates between pages
- Extending the lifespan of memory devices with worn-out memory cells
Problems solved by this technology:
- Enhancing the reliability and efficiency of reading data from memory cells
- Addressing the issue of worn-out memory cells affecting overall memory device performance
Benefits of this technology:
- Increased accuracy and speed in reading data from memory cells
- Prolonged lifespan of memory devices with worn-out memory cells
- Improved overall performance and reliability of memory devices
Original Abstract Submitted
A method of operating a memory device includes reading a first page of memory cells containing at least one worn-out memory cell therein using a read voltage, from a first memory block, and reading a second page of memory cells, which extends adjacent to the first page in the first memory block, using the read voltage. An operation is performed to determine a match rate between a position of a column including a “0” bit in the first page with a position of a column including a “0” bit in the second page. Thereafter, the second page is read by adjusting a read pass voltage applied to a word line of another page in the first memory block, when the match rate exceeds a threshold match rate.
