18301991. SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME simplified abstract (SK hynix Inc.)
Contents
- 1 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
Organization Name
Inventor(s)
Jun Sik Kim of Gyeonggi-do (KR)
Sung Hwan Hwang of Gyeonggi-do (KR)
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18301991 titled 'SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
Simplified Explanation
The semiconductor device described in the abstract includes a gate trench, gate dielectric layer, gate electrodes, dipole inducing portion, and a capping layer.
- The gate trench is formed in a substrate.
- The gate dielectric layer is formed along the profile of the sidewalls and bottom surface of the gate trench.
- First and second gate electrodes are stacked over the gate dielectric layer to gap-fill a portion of the gate trench.
- A dipole inducing portion is positioned between the second gate electrode and the gate dielectric layer, consisting of a dipole bond and a non-dipole bond.
- A capping layer is used to gap-fill the remaining portion of the gate trench over the dipole inducing portion and the second gate electrode.
Potential Applications
This technology could be applied in the manufacturing of advanced semiconductor devices for various electronic applications, such as in integrated circuits and microprocessors.
Problems Solved
This technology helps in improving the performance and efficiency of semiconductor devices by enhancing the gate structure and reducing parasitic effects.
Benefits
The benefits of this technology include increased device reliability, improved electrical characteristics, and enhanced overall device performance.
Potential Commercial Applications
The potential commercial applications of this technology could be in the semiconductor industry for producing high-performance electronic devices with advanced gate structures.
Possible Prior Art
One possible prior art could be the use of different gate structures and materials in semiconductor devices to improve device performance and reliability.
Unanswered Questions
How does this technology compare to existing gate structures in terms of performance and efficiency?
This article does not provide a direct comparison with existing gate structures in terms of performance and efficiency. Further research or testing may be needed to evaluate the technology's advantages over current solutions.
What are the specific electronic applications where this technology could have the most significant impact?
The article does not specify the specific electronic applications where this technology could have the most significant impact. Additional studies or market analysis may be required to identify the key areas of application for this innovation.
Original Abstract Submitted
A semiconductor device includes a gate trench formed in a substrate, a gate dielectric layer formed along profile of sidewalls and a bottom surface of the gate trench, first and second gate electrodes that are stacked over the gate dielectric layer to gap-fill a portion of the gate trench, a dipole inducing portion positioned between the second gate electrode and the gate dielectric layer and including a dipole bond and a non-dipole bond, and a capping layer suitable for gap-filling a remaining portion of the gate trench over the dipole inducing portion and the second gate electrode.
