18298259. Advanced OES Characterization simplified abstract (Tokyo Electron Limited)

Advanced OES Characterization

Organization Name

Tokyo Electron Limited

Inventor(s)

Sergey Voronin of Albany NY (US)

Francisco Machuca of Fremont CA (US)

Blaze Messer of Albany NY (US)

Yan Chen of Fremont CA (US)

Ying Zhu of Fremont CA (US)

Mihail Mihaylov of Fremont CA (US)

Joel Ng of Fremont CA (US)

Ashawaraya Shalini of Fremont CA (US)

Da Song of Albany NY (US)

Akiteru Ko of Albany NY (US)

Advanced OES Characterization - A simplified explanation of the abstract

This abstract first appeared for US patent application 18298259 titled 'Advanced OES Characterization

The patent application describes a processing system with a processing chamber, vacuum pumps, an exhaust gas line, a plasma power supply, and an optical emission spectroscopy (OES) measurement assembly.

• The processing chamber holds the substrate to be processed.
• The first vacuum pump is connected to the process chamber and the second vacuum pump.
• The plasma power supply generates a plasma from exhaust gas between the vacuum pumps.
• The OES measurement assembly includes an OES detector to measure OES signals from the plasma.

Potential Applications: - Semiconductor manufacturing - Thin film deposition processes - Surface treatment of materials

Problems Solved: - Monitoring and controlling plasma processes - Improving process efficiency and quality - Real-time analysis of plasma characteristics

Benefits: - Enhanced process control - Increased product quality - Reduced production costs

Commercial Applications: Title: Advanced Plasma Processing System for Semiconductor Manufacturing This technology can be used in semiconductor fabrication facilities to improve process control and product quality, leading to cost savings and competitive advantages in the market.

Questions about the technology: 1. How does the OES measurement assembly contribute to process optimization? 2. What are the advantages of using multiple vacuum pumps in the processing system?

Original Abstract Submitted

A processing system that includes: a processing chamber configured to hold a substrate to be processed; a first vacuum pump; a second vacuum pump disposed downstream from the first vacuum pump; an exhaust gas line connecting the process chamber and the first vacuum pump, and the first vacuum pump and the second vacuum pump; a plasma power supply including a first RF power source configured to generate a plasma from a portion of an exhaust gas between the first and second vacuum pumps; and an optical emission spectroscopy (OES) measurement assembly including an OES detector configured to measure OES signals from the plasma.