18297094. MEMORY DEVICE, READ CLOCK GENERATION CIRCUIT, AND METHOD FOR CONTROLLING READ OPERATION IN MEMORY DEVICE simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.)
MEMORY DEVICE, READ CLOCK GENERATION CIRCUIT, AND METHOD FOR CONTROLLING READ OPERATION IN MEMORY DEVICE
Organization Name
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
Inventor(s)
SANJEEV KUMAR Jain of KANATA (CA)
MEMORY DEVICE, READ CLOCK GENERATION CIRCUIT, AND METHOD FOR CONTROLLING READ OPERATION IN MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18297094 titled 'MEMORY DEVICE, READ CLOCK GENERATION CIRCUIT, AND METHOD FOR CONTROLLING READ OPERATION IN MEMORY DEVICE
The present disclosure introduces a memory device with advanced features for efficient data storage and retrieval.
- Memory device includes a memory array, read-clock generation circuit, and local input/output circuit.
- Read-clock generation circuit generates a read enable signal based on various input signals.
- Local input/output circuit consists of column-address pass gates and read pass gates for data transfer.
- Column-address pass gates receive data from memory cells in a selected row.
- Read pass gates connect read bit-lines to bit-lines based on the read enable signal.
- Read enable signal is de-asserted after pre-charging the connected read bit-lines.
Potential Applications: - This technology can be used in various electronic devices requiring high-speed memory access. - It can enhance the performance of data storage systems in computers, smartphones, and other gadgets.
Problems Solved: - Improves data access speed and efficiency in memory devices. - Enhances overall performance and reliability of electronic devices.
Benefits: - Faster data retrieval and storage capabilities. - Improved efficiency and reliability of memory devices. - Enhanced performance of electronic systems.
Commercial Applications: Title: Advanced Memory Device Technology for Enhanced Data Storage This technology can be utilized in the development of high-performance computers, smartphones, and other electronic devices. It can also be beneficial for data centers and cloud computing facilities seeking faster and more reliable memory solutions.
Prior Art: Readers can explore prior patents related to memory devices, read-clock generation circuits, and local input/output circuits to understand the evolution of similar technologies.
Frequently Updated Research: Researchers are constantly working on improving memory devices to meet the growing demands of data-intensive applications. Stay updated on the latest advancements in memory technology for potential future enhancements.
Questions about Memory Device Technology: 1. How does the read-clock generation circuit contribute to the efficiency of data retrieval in memory devices? 2. What are the key advantages of using local input/output circuits in memory devices?
Original Abstract Submitted
The present disclosure provides a memory device, which includes a memory array, a read-clock generation circuit, and a local input/output circuit. The read-clock generation circuit receives a sense amplifier enable signal, a first sense amplifier pre-charge signal, and a latched write enable signal to generate a first read enable signal. The local input/output circuit includes multiple pairs of column-address pass gates, and a pair of read pass gates. The plurality of pairs of column-address pass gates are configured to receive data from a bit-line pair of the memory cells in a row selected by an address signal. The pair of read pass gates connects a read bit-line pair to the bit-line pair in response to the first read enable signal being in a low-logic state. The first read enable signal is de-asserted after the read bit-line pair connected to the pair of read pass gates are pre-charged.
