18294889. POLISHING LIQUID FOR CMP, POLISHING LIQUID SET FOR CMP AND POLISHING METHOD simplified abstract (Resonac Corporation)
Contents
POLISHING LIQUID FOR CMP, POLISHING LIQUID SET FOR CMP AND POLISHING METHOD
Organization Name
Inventor(s)
Noriaki Murakami of Tokyo (JP)
POLISHING LIQUID FOR CMP, POLISHING LIQUID SET FOR CMP AND POLISHING METHOD - A simplified explanation of the abstract
This abstract first appeared for US patent application 18294889 titled 'POLISHING LIQUID FOR CMP, POLISHING LIQUID SET FOR CMP AND POLISHING METHOD
The patent application describes a polishing liquid for Chemical Mechanical Polishing (CMP) containing abrasive grains, an additive, and water. The abrasive grains consist of cerium-based particles, and the additive includes specific compounds to enhance the polishing process.
- The polishing liquid includes abrasive grains with cerium-based particles for effective polishing.
- The additive in the liquid includes a 4-pyrone-based compound and a compound with multiple nitrogen atoms bonded to a hydroxyalkyl group.
- Another version of the polishing liquid includes picolinic acid as part of the additive, along with the compound with multiple nitrogen atoms bonded to a hydroxyalkyl group.
Potential Applications: - Semiconductor manufacturing - Optical lens polishing - Metal surface finishing
Problems Solved: - Improving polishing efficiency - Enhancing surface smoothness - Reducing defects in polished materials
Benefits: - Increased polishing precision - Enhanced surface quality - Improved overall productivity
Commercial Applications: The technology can be utilized in industries such as semiconductor manufacturing, optics, and metalworking to achieve high-quality polished surfaces efficiently.
Questions about the technology: 1. How does the use of cerium-based particles in the abrasive grains improve the polishing process? 2. What are the specific benefits of incorporating picolinic acid in the additive for CMP polishing liquids?
Original Abstract Submitted
A polishing liquid for CMP, containing: abrasive grains; an additive; and water, in which the abrasive grains include cerium-based particles, the additive includes (A1) a 4-pyrone-based compound represented by General Formula (1) below and (B) a compound having two or more nitrogen atoms to which a hydroxyalkyl group is bonded. A polishing liquid for CMP, containing: abrasive grains; an additive; and water, in which the abrasive grains include cerium-based particles, the additive includes (A2) picolinic acid and (B) a compound having two or more nitrogen atoms to which a hydroxyalkyl group is bonded.
