18294339. SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS (Tokyo Electron Limited)
Contents
SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS
Organization Name
Inventor(s)
Gentaro Goshi of Koshi-shi, Kumamoto (JP)
SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS
This abstract first appeared for US patent application 18294339 titled 'SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS
Original Abstract Submitted
A substrate processing method performed in a substrate processing apparatus configured to process a substrate by bringing the substrate into contact with a processing fluid in a supercritical state is provided. The substrate processing apparatus includes: a processing vessel having a processing space; a main supply line configured to supply the processing fluid to the processing space; a discharge line having a first opening/closing valve, the discharge line being configured to discharge the processing fluid from the processing space; and a bypass line branched off from the main supply line at a branch point, the bypass line joining the discharge line at a junction point downstream of the first opening/closing valve. The substrate processing method includes: increasing a pressure of the processing space up to a preset processing pressure; and maintaining, after the increasing of the pressure, the pressure of the processing space at the processing pressure.
