18289172. SOLID-STATE IMAGING ELEMENT simplified abstract (SONY GROUP CORPORATION)
Contents
SOLID-STATE IMAGING ELEMENT
Organization Name
Inventor(s)
Michinori Shiomi of Tokyo (JP)
Syuuiti Takizawa of Tokyo (JP)
SOLID-STATE IMAGING ELEMENT - A simplified explanation of the abstract
This abstract first appeared for US patent application 18289172 titled 'SOLID-STATE IMAGING ELEMENT
The abstract describes a solid-state imaging element with a photoelectric conversion layer containing first semiconductor nanoparticles and a buffer layer containing second semiconductor nanoparticles. A p-n junction surface is formed at the interface between the two layers. The buffer layer has a higher carrier concentration and film thickness product compared to the product of the carrier concentration of the photoelectric conversion layer and the diffusion length of a minority carrier. This design maximizes the thickness of the depletion region in the photoelectric conversion layer.
- The imaging element includes a photoelectric conversion layer with first semiconductor nanoparticles and a buffer layer with second semiconductor nanoparticles.
- A p-n junction surface is formed at the interface between the photoelectric conversion layer and the buffer layer.
- The buffer layer has a higher carrier concentration and film thickness product than the product of the carrier concentration of the photoelectric conversion layer and the diffusion length of a minority carrier.
- This configuration maximizes the thickness of the depletion region in the photoelectric conversion layer.
Potential Applications: - Digital cameras - Medical imaging devices - Surveillance systems - Automotive cameras - Smartphone cameras
Problems Solved: - Enhanced image quality - Improved sensitivity - Higher resolution - Reduced noise - Increased efficiency
Benefits: - Higher quality images - Improved performance in low light conditions - Energy efficiency - Enhanced overall functionality - Potential cost savings in manufacturing
Commercial Applications: Title: Advanced Solid-State Imaging Element for Enhanced Image Quality This technology can be utilized in various commercial applications such as digital cameras, medical imaging devices, surveillance systems, automotive cameras, and smartphone cameras. The enhanced image quality, sensitivity, and efficiency offered by this imaging element can provide a competitive edge in the market.
Questions about Solid-State Imaging Elements: 1. How does the buffer layer contribute to maximizing the thickness of the depletion region in the photoelectric conversion layer? The buffer layer's higher carrier concentration and film thickness product compared to the product of the carrier concentration of the photoelectric conversion layer and the diffusion length of a minority carrier help maximize the thickness of the depletion region in the photoelectric conversion layer.
2. What are the potential long-term implications of using this advanced solid-state imaging element in various industries? The use of this advanced solid-state imaging element can lead to improved image quality, sensitivity, and efficiency in industries such as photography, healthcare, security, automotive, and telecommunications.
Original Abstract Submitted
A solid-state imaging element according to an embodiment of the present disclosure includes: a photoelectric conversion layer including first semiconductor nanoparticles; and a buffer layer including second semiconductor nanoparticles. A p-n junction surface is formed at an interface between the photoelectric conversion layer and the buffer layer. A product of a carrier concentration and a film thickness of the buffer layer is larger than a product of a carrier concentration of the photoelectric conversion layer and a diffusion length of a minority carrier, and a thickness of a depletion region formed in the photoelectric conversion layer is maximized.
