18287650. SEMICONDUCTOR DEVICE AND POWER CONVERSION APPARATUS simplified abstract (Mitsubishi Electric Corporation)
Contents
SEMICONDUCTOR DEVICE AND POWER CONVERSION APPARATUS
Organization Name
Mitsubishi Electric Corporation
Inventor(s)
SEMICONDUCTOR DEVICE AND POWER CONVERSION APPARATUS - A simplified explanation of the abstract
This abstract first appeared for US patent application 18287650 titled 'SEMICONDUCTOR DEVICE AND POWER CONVERSION APPARATUS
The patent application describes a technique to reduce energy loss during a switching operation by utilizing bottom protection layers of different conductivity types in specific regions of the device.
- The first peripheral region includes a second bottom protection layer at the bottom of a second trench.
- The second peripheral region includes a third bottom protection layer at the bottom of a third trench.
- The second bottom protection layer is connected to a source electrode, while the third bottom protection layer is connected to a current sense electrode.
- The layers help improve the efficiency of the switching operation and reduce energy loss.
Potential Applications: - Power electronics - Semiconductor devices - Electrical engineering
Problems Solved: - Energy loss during switching operations - Efficiency of power electronics
Benefits: - Improved energy efficiency - Enhanced performance of semiconductor devices
Commercial Applications: Title: "Enhanced Energy Efficiency in Power Electronics: Commercial Applications and Market Implications" This technology could be used in various industries such as renewable energy, electric vehicles, and consumer electronics to improve energy efficiency and overall performance.
Prior Art: Readers can explore prior patents related to power electronics, semiconductor devices, and energy efficiency to understand the existing technology landscape in this field.
Frequently Updated Research: Stay updated on the latest advancements in power electronics, semiconductor materials, and energy-efficient technologies to enhance the understanding and implementation of this innovation.
Questions about the Technology: 1. How does the use of different conductivity types in bottom protection layers improve energy efficiency in switching operations? 2. What are the potential challenges in integrating this technique into existing semiconductor devices and power electronics systems?
Original Abstract Submitted
An object of the present invention is to provide a technique capable of reducing an energy loss during a switching operation. A first peripheral region includes a second bottom protection layer of a second conductivity type provided at a bottom of a second trench, and a second peripheral region includes a third bottom protection layer of the second conductivity type provided at a bottom of a third trench. The second bottom protection layer is electrically connected to a source electrode, the third bottom protection layer is electrically connected to a current sense electrode, or the second bottom protection layer and the third bottom protection layer are respectively electrically connected to the source electrode and the current sense electrode.
