18284242. DISTORTION RESISTANCE FILM AND PRESSURE SENSOR simplified abstract (TDK CORPORATION)

From WikiPatents
Jump to navigation Jump to search

DISTORTION RESISTANCE FILM AND PRESSURE SENSOR

Organization Name

TDK CORPORATION

Inventor(s)

Kohei Nawaoka of Tokyo (JP)

Ken Unno of Tokyo (JP)

Tetsuya Sasahara of Tokyo (JP)

Masanori Kobayashi of Tokyo (JP)

DISTORTION RESISTANCE FILM AND PRESSURE SENSOR - A simplified explanation of the abstract

This abstract first appeared for US patent application 18284242 titled 'DISTORTION RESISTANCE FILM AND PRESSURE SENSOR

Simplified Explanation

The abstract describes a patent application for a distortion resistance film made of CrAlN, which can reduce property changes when composition changes occur. This film is used in pressure sensors.

  • The distortion resistance film is represented by the formula CrAlN.
  • Composition regions of x and y satisfy 25<x≤50 and 0.1<y≤20, respectively.

Potential Applications

The technology can be applied in various industries such as automotive, aerospace, and manufacturing for pressure sensors and other devices requiring distortion resistance films.

Problems Solved

1. Property changes accompanying composition changes are reduced. 2. Pressure sensors can operate more effectively and accurately.

Benefits

1. Improved performance and durability of pressure sensors. 2. Enhanced reliability in various applications. 3. Cost-effective solution for maintaining stability in composition changes.

Potential Commercial Applications

Optimizing Pressure Sensors with CrAlN Distortion Resistance Film

Possible Prior Art

There may be prior art related to distortion resistance films in pressure sensors or other similar applications, but specific examples are not provided in the abstract.

Unanswered Questions

How does the CrAlN film compare to other distortion resistance films in terms of performance and cost-effectiveness?

The article does not provide a direct comparison with other distortion resistance films, leaving the reader to wonder about the specific advantages of CrAlN over existing options.

Are there any limitations or challenges in implementing the CrAlN film in pressure sensors or other devices?

The abstract does not mention any potential drawbacks or obstacles that may arise when using the CrAlN film, leaving room for further exploration of its practical applications.


Original Abstract Submitted

A distortion resistance film is capable of reducing a property change accompanying a composition change and a pressure sensor uses the distortion resistance film. The distortion resistance film is represented by a formula CrAlN, in which composition regions of x and y satisfy 25<x≤50 and 0.1<y≤20, respectively.