18283803. SINGLE-CRYSTAL DIAMOND AND METHOD OF MANUFACTURING THE SAME simplified abstract (SUMITOMO ELECTRIC INDUSTRIES, LTD.)
Contents
- 1 SINGLE-CRYSTAL DIAMOND AND METHOD OF MANUFACTURING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SINGLE-CRYSTAL DIAMOND AND METHOD OF MANUFACTURING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 What are the specific methods used to measure the X-ray diffraction rocking curve in the patent application?
- 1.11 How does the controlled nitrogen content impact the properties of the single-crystal diamond?
- 1.12 Original Abstract Submitted
SINGLE-CRYSTAL DIAMOND AND METHOD OF MANUFACTURING THE SAME
Organization Name
SUMITOMO ELECTRIC INDUSTRIES, LTD.
Inventor(s)
Yoshiki Nishibayashi of Osaka (JP)
Yutaka Kobayashi of Osaka (JP)
SINGLE-CRYSTAL DIAMOND AND METHOD OF MANUFACTURING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18283803 titled 'SINGLE-CRYSTAL DIAMOND AND METHOD OF MANUFACTURING THE SAME
Simplified Explanation
The patent application describes a single-crystal diamond with specific characteristics, including a narrow X-ray diffraction rocking curve, a peak at a specific Raman shift with a narrow half-width, low etch-pit density, and a controlled nitrogen content.
- Narrow X-ray diffraction rocking curve:
- Half-width of 20 seconds or less - Measured with CuKα radiation in a (004) plane parallel arrangement - Utilizes a diamond crystal as the first crystal in X-ray diffraction by a double-crystal method
- Narrow peak at a specific Raman shift:
- Raman shift in the range of 1332 cm to 1333 cm - Half-width of 2.0 cm or less
- Low etch-pit density:
- 10,000/cm² or less - Measured in an etching test
- Controlled nitrogen content:
- More than 0.1 ppm and 50 ppm or less based on the number of atoms
Potential Applications
The technology could be applied in: - High-performance electronics - Advanced sensors - Quantum computing
Problems Solved
The technology addresses issues related to: - Material quality in diamond-based devices - Precision in diamond crystal manufacturing - Performance consistency in diamond applications
Benefits
The benefits of this technology include: - Improved device performance - Enhanced reliability - Consistent quality in diamond materials
Potential Commercial Applications
The technology could find commercial use in: - Semiconductor industry - Aerospace sector - Medical equipment manufacturing
Possible Prior Art
Prior art in diamond crystal manufacturing and characterization techniques may exist, but specific details are not provided in the abstract.
Unanswered Questions
What are the specific methods used to measure the X-ray diffraction rocking curve in the patent application?
The patent application mentions using CuKα radiation in a (004) plane parallel arrangement, but the detailed methodology is not outlined.
How does the controlled nitrogen content impact the properties of the single-crystal diamond?
The patent application states a specific range for nitrogen content, but the exact influence on the diamond's characteristics is not elaborated.
Original Abstract Submitted
A single-crystal diamond having an X-ray diffraction rocking curve with a half-width of 20 seconds or less, wherein the half-width of the X-ray diffraction rocking curve is measured with CuKα radiation in a (004) plane parallel arrangement using a diamond crystal as a first crystal in X-ray diffraction by a double-crystal method, a peak at a Raman shift in the range of 1332 cmto 1333 cmin a Raman spectrum has a half-width of 2.0 cmor less, the single-crystal diamond has an etch-pit density of 10,000/cmor less, the etch-pit density is measured in an etching test, and the single-crystal diamond has a nitrogen content of more than 0.1 ppm and 50 ppm or less based on the number of atoms.
