18282025. SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD simplified abstract (Tokyo Electron Limited)
Contents
SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD
Organization Name
Inventor(s)
Teruhiko Kodama of Kumamoto (JP)
Koichi Matsunaga of Kumamoto (JP)
Hideaki Iwasaka of Kumamoto (JP)
SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD - A simplified explanation of the abstract
This abstract first appeared for US patent application 18282025 titled 'SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD
The patent application describes a substrate processing apparatus that forms a friction-reducing film on the rear surface of a substrate using a hermetically-sealed processing space.
- The apparatus includes a heating element to heat the rear surface of the substrate, a material supplier to supply the film-forming material, and gas suppliers to supply inert gas to different areas of the substrate.
- The first gas supplier provides inert gas to the peripheral edge of the substrate from above, while the second gas supplier supplies inert gas closer to the center of the substrate from above.
- An exhauster is used to exhaust the atmosphere from the processing space from the periphery or below the substrate.
Potential Applications: - Semiconductor manufacturing - Thin film deposition processes - Solar cell production
Problems Solved: - Reduced friction on the rear surface of the substrate - Improved processing efficiency - Enhanced film quality
Benefits: - Increased substrate processing speed - Enhanced film uniformity - Reduced wear and tear on processing equipment
Commercial Applications: Friction-reducing film formation in various industries such as electronics, optics, and renewable energy.
Questions about the technology: 1. How does the apparatus ensure uniform distribution of the friction-reducing film on the substrate? 2. What are the specific advantages of using inert gas in the film formation process?
Original Abstract Submitted
A substrate processing apparatus that forms a friction reducing film on a rear surface of a substrate includes a processing container configured to accommodate the substrate and to define a hermetically-sealed processing space, a heating element configured to heat the rear surface of the substrate inside the processing container, a supplier configured to supply a material forming the friction reducing film toward the rear surface of the substrate inside the processing container, a first gas supplier configured to supply an inert gas to a peripheral edge of the substrate from a space above the substrate, a second gas supplier configured to supply the inert gas closer to a center of the substrate than the first gas supplier from a space above the substrate inside the processing, and an exhauster configured to exhaust an atmosphere of the processing space from a periphery or a space below the substrate.
