18272438. Deposition Of Piezoelectric Films simplified abstract (Applied Materials, Inc.)

Deposition Of Piezoelectric Films

Organization Name

Applied Materials, Inc.

Inventor(s)

Vijay Bhan Sharma of Rajasthan (IN)

Yuan Xue of Shaanxi (CN)

Abhijeet Laxman Sangle of Maharashtra (IN)

Bharatwaj Ramakrishnan of San Jose CA (US)

Yi Yang of Shaanxi (CN)

Suresh Chand Seth of Mumbai (IN)

Ankur Anant Kadam of Thane (IN)

Deposition Of Piezoelectric Films - A simplified explanation of the abstract

This abstract first appeared for US patent application 18272438 titled 'Deposition Of Piezoelectric Films

Simplified Explanation

The patent application describes a piezoelectric device with a lead magnesium niobate-lead titanate (PMNPT) piezoelectric film on a substrate. The PMNPT film has a high piezoelectric coefficient of 200 pm/V or greater.

• Substrate with PMNPT piezoelectric film
• PMNPT film includes thermal oxide layer, first electrode, seed layer, PMNPT piezoelectric layer, and second electrode
• PMNPT film has a piezoelectric coefficient of 200 pm/V or greater

Potential Applications

The piezoelectric device can be used in:

• Sensors
• Actuators
• Energy harvesting devices

Problems Solved

• High sensitivity and efficiency in piezoelectric applications
• Improved performance in sensors and actuators

Benefits

• High piezoelectric coefficient for increased sensitivity
• Enhanced performance in various applications
• Reliable and durable device design

Potential Commercial Applications

• Medical devices
• Aerospace technology
• Consumer electronics

Possible Prior Art

Prior art may include:

• Piezoelectric devices with lower piezoelectric coefficients
• Traditional piezoelectric materials without the same performance capabilities

How does the PMNPT piezoelectric film compare to other high-performance piezoelectric materials in terms of efficiency and sensitivity?

The article does not provide a direct comparison with other high-performance piezoelectric materials, leaving room for further research and analysis in this area.

What specific manufacturing processes are involved in creating the PMNPT piezoelectric film with such a high piezoelectric coefficient?

The patent application does not delve into the detailed manufacturing processes used to achieve the high piezoelectric coefficient, which could be a crucial aspect for understanding the technology better.

Original Abstract Submitted

A piezoelectric device comprises: a substrate () and a lead magnesium niobate-lead titanate (PMNPT) piezoelectric film on the substrate (). The PMNPT film comprises: a thermal oxide layer () on the substrate (); a first electrode above on the thermal oxide layer (); a seed layer () above the first electrode; a lead magnesium niobate-lead titanate (PMNPT) piezoelectric layer () on the seed layer (), and a second electrode on the PMNPT piezoelectric layer (). The PMNPT film comprises a piezoelectric coefficient (d) of greater than or equal to 200 pm/V.