18264561. SEMICONDUCTOR DEVICE simplified abstract (Panasonic Intellectual Property Management Co., Ltd.)
Contents
SEMICONDUCTOR DEVICE
Organization Name
Panasonic Intellectual Property Management Co., Ltd.
Inventor(s)
Manabu Yanagihara of Osaka (JP)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18264561 titled 'SEMICONDUCTOR DEVICE
The semiconductor device in this patent application includes third active regions that connect two finger-end portions of field effect transistors (FETs) spaced apart from each other. Above the third active regions, there are portions of a third nitride semiconductor layer that includes P-type impurities.
- The innovation involves incorporating third active regions in a semiconductor device to enhance connectivity between FETs.
- The use of a third nitride semiconductor layer with P-type impurities above the active regions adds a new dimension to the device's functionality.
- By spacing out the FETs and connecting them with the third active regions, the device can achieve improved performance and efficiency.
- This design allows for better control and manipulation of electrical signals within the semiconductor device.
- The integration of P-type impurities in the third nitride semiconductor layer contributes to the overall functionality and effectiveness of the device.
Potential Applications: This technology could be applied in the development of advanced electronic devices, such as smartphones, tablets, and computers. It may also find use in the automotive industry for improving the performance of electronic components in vehicles. The medical field could benefit from this technology in the creation of more efficient medical devices and equipment.
Problems Solved: Enhanced connectivity between FETs in a semiconductor device. Improved performance and efficiency of electronic devices. Better control and manipulation of electrical signals.
Benefits: Increased functionality and efficiency of electronic devices. Enhanced performance and connectivity. Potential for advancements in various industries.
Commercial Applications: Title: Advanced Semiconductor Device Technology for Enhanced Connectivity This technology could be commercially utilized in the consumer electronics industry for developing high-performance devices. It may also have applications in the automotive sector for improving electronic components in vehicles, leading to better performance and reliability.
Questions about the technology: 1. How does the incorporation of third active regions improve the functionality of the semiconductor device? 2. What specific benefits do the P-type impurities in the third nitride semiconductor layer provide to the device?
Original Abstract Submitted
A semiconductor device includes third active regions that connect two finger-end portions of field effect transistors (FETs) spaced apart from each other, and includes, above the third active regions, portions of a third nitride semiconductor layer that includes P-type impurities.
