18251701. SEMICONDUCTOR STORAGE APPARATUS simplified abstract (SONY SEMICONDUCTOR SOLUTIONS CORPORATION)
Contents
SEMICONDUCTOR STORAGE APPARATUS
Organization Name
SONY SEMICONDUCTOR SOLUTIONS CORPORATION
Inventor(s)
SEMICONDUCTOR STORAGE APPARATUS - A simplified explanation of the abstract
This abstract first appeared for US patent application 18251701 titled 'SEMICONDUCTOR STORAGE APPARATUS
Simplified Explanation:
This patent application describes a semiconductor storage apparatus that includes memory cells and a control circuit. Each memory cell has a magnetization reversal memory device and a switch device to control current flow. The control circuit adjusts writing based on the error rate curve line's asymmetry with respect to the writing voltage of the memory device.
- Key Features and Innovation:
- Plurality of memory cells with magnetization reversal memory devices - First switch device to control current flow - Control circuit adjusts writing based on error rate curve line's asymmetry
Potential Applications: This technology could be used in various data storage applications, such as solid-state drives, non-volatile memory, and other semiconductor storage devices.
Problems Solved: This technology addresses issues related to writing errors in memory devices by optimizing the writing process based on the device's voltage characteristics.
Benefits: - Improved data reliability - Enhanced performance of semiconductor storage devices - Better control over writing processes
Commercial Applications: Potential commercial applications include the manufacturing of high-performance solid-state drives, data centers, and other storage solutions where data reliability and performance are critical.
Prior Art: Readers interested in prior art related to this technology can explore research papers, patents, and industry publications on magnetization reversal memory devices and writing control in semiconductor storage.
Frequently Updated Research: Researchers are continually exploring new ways to optimize writing processes in memory devices to improve data storage reliability and performance.
Questions about Semiconductor Storage Apparatus: 1. How does the asymmetry of the error rate curve line impact the writing process in memory devices? 2. What are the potential challenges in implementing this technology in commercial semiconductor storage devices?
Original Abstract Submitted
A semiconductor storage apparatus according to one embodiment of the present disclosure includes a plurality of memory cells and a control circuit. Each of the memory cells includes a magnetization reversal memory device and a first switch device that controls a current to flow to the magnetization reversal memory device. The control circuit performs a writing control based on an asymmetric property of a writing error rate curve line with respect to a writing voltage of the magnetization reversal memory device.
