18244376. METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
- 1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18244376 titled 'METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Simplified Explanation
The abstract describes a method for manufacturing a semiconductor device, involving several key steps such as forming a step key on a substrate, applying a mold layer on the step key, and etching the mold layer using a second mask layer.
- Forming a step key on a substrate
- Applying a mold layer on the step key
- Forming a first mask layer containing a metal material
- Creating a transparent layer in the first mask layer
- Etching the mold layer using a second mask layer
Potential Applications
The technology described in this patent application could be applied in the manufacturing of various semiconductor devices, such as microchips, sensors, and integrated circuits.
Problems Solved
This method helps in achieving precise and controlled etching of the mold layer, which is crucial in the fabrication of semiconductor devices with intricate designs and features.
Benefits
The use of multiple mask layers and a transparent layer allows for accurate patterning and etching processes, leading to high-quality semiconductor devices with improved performance and reliability.
Potential Commercial Applications
- Advanced semiconductor manufacturing
- Electronics industry for high-performance devices
Possible Prior Art
One possible prior art could be the use of similar multi-layer masking techniques in semiconductor fabrication processes to achieve precise etching and patterning.
Unanswered Questions
How does this method compare to existing semiconductor manufacturing techniques?
This article does not provide a direct comparison to existing techniques in semiconductor manufacturing, leaving the reader to wonder about the specific advantages or disadvantages of this new method.
What are the specific materials used in each layer of the process and how do they contribute to the overall effectiveness of the method?
The article does not delve into the details of the materials used in each layer and their individual roles in the manufacturing process, leaving a gap in understanding the intricacies of the technology.
Original Abstract Submitted
A method for manufacturing a semiconductor device, including forming a step key on a substrate, forming a mold layer on the step key covering the step key, forming a first mask layer on the mold layer, forming a transparent layer in the first mask layer overlapping the step key, forming a second mask layer on the first mask layer and the transparent layer, etching the mold layer using the second mask layer, wherein the first mask layer includes a metal material.
