18244305. DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract (SAMSUNG DISPLAY CO., LTD.)
Contents
- 1 DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 How does this technology compare to existing display devices in terms of energy efficiency?
- 1.11 What are the potential cost implications of implementing this technology in mass production?
- 1.12 Original Abstract Submitted
DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME
Organization Name
Inventor(s)
MYOUNGGEUN Cha of Yongin-si (KR)
DONGKYUN Seo of Yongin-si (KR)
HEEKYUN Shin of Yongin-si (KR)
YONG-HOON Yang of Yongin-si (KR)
DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18244305 titled 'DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME
Simplified Explanation
The patent application describes a display device with multiple layers on a substrate, including a conductive layer, an inorganic layer, and an amorphous silicon layer.
- The substrate has a first area with a transmission area and a non-transmission area, as well as a second area adjacent to the first area.
- The display portion is located in the non-transmission area and the second area on the substrate.
- The conductive layer is positioned between the substrate and the display portion, overlapping the non-transmission area and the second area.
- The inorganic layer is placed on the substrate under the conductive layer, in contact with it, and overlapping it.
- The amorphous silicon layer is on the substrate, under the inorganic layer, in contact with it, overlapping the conductive layer in the first area, and entirely overlapping the substrate in the second area.
Potential Applications
The technology described in this patent application could be used in various display devices, such as smartphones, tablets, and televisions.
Problems Solved
This technology solves the problem of improving the performance and durability of display devices by using multiple layers to enhance the overall functionality.
Benefits
The benefits of this technology include increased display quality, improved conductivity, and enhanced overall performance of the display device.
Potential Commercial Applications
The technology could be commercially applied in the consumer electronics industry for manufacturing advanced display devices with superior features and performance.
Possible Prior Art
One possible prior art for this technology could be the use of multiple layers in display devices to enhance functionality and performance.
Unanswered Questions
How does this technology compare to existing display devices in terms of energy efficiency?
The article does not provide information on the energy efficiency of the display device compared to existing technologies.
What are the potential cost implications of implementing this technology in mass production?
The article does not address the potential cost implications of mass-producing display devices using this technology.
Original Abstract Submitted
A display device is disclosed that includes a substrate, a display portion, a conductive layer, an inorganic layer, and an amorphous silicon layer. The substrate includes a first area including a transmission area and a non-transmission area adjacent to the transmission area, and a second area adjacent to the first area. The display portion is disposed in the non-transmission area and the second area on the substrate. The conductive layer is disposed between the substrate and the display portion, and overlaps the non-transmission area and the second area. The inorganic layer is disposed on the substrate under the conductive layer, in contact with the conductive layer, and overlaps the conductive layer. The amorphous silicon layer is disposed on the substrate, under the inorganic layer, in contact with the inorganic layer, overlaps the conductive layer in the first area, and entirely overlaps the substrate in the second area.
