18243818. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Jaeseoung Park of Suwon-si (KR)
Jeonghyuk Yim of Suwon-si (KR)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18243818 titled 'SEMICONDUCTOR DEVICE
The semiconductor device described in the abstract consists of an active region, a gate structure, a source/drain region, a first contact structure, and a second contact structure. The second contact structure is made up of a first layer with a first grain and a second layer with second grains on top.
- The first layer of the second contact structure has a maximum vertical distance between the lowermost and uppermost ends of the first grain equal to the vertical distance of the entire layer.
- The size of the first grain is larger than the size of each of the second grains.
- The width of the first layer is greater than the width of the first contact structure.
Potential Applications: - This technology can be used in the development of advanced semiconductor devices for various electronic applications. - It can improve the performance and efficiency of integrated circuits and microprocessors.
Problems Solved: - Enhances the conductivity and connectivity of the semiconductor device. - Provides better control and management of electrical signals within the device.
Benefits: - Increased reliability and durability of semiconductor devices. - Improved overall performance and functionality of electronic systems.
Commercial Applications: Title: Advanced Semiconductor Device Technology for Enhanced Electronic Systems This technology can be utilized in the production of high-performance electronic devices such as smartphones, computers, and automotive electronics. It can also benefit industries involved in telecommunications, aerospace, and medical technology.
Questions about Semiconductor Device Technology: 1. How does the size of the first grain in the second contact structure impact the overall performance of the semiconductor device? 2. What are the specific advantages of having a larger width in the first layer compared to the first contact structure?
Original Abstract Submitted
A semiconductor device includes an active region extending in a first direction, a gate structure extending in a second direction, a source/drain region on the active region, a first contact structure connected to the source/drain region, and a second contact structure connected to the first contact structure. The second contact structure includes a first layer including a first grain and a second layer including second grains on the first layer. Within the first layer, a maximum vertical distance between a lowermost end of the first grain and an uppermost end of the first grain is equal to a vertical distance between a lowermost end of the first layer and an uppermost end of the first layer. A size of the first grain is greater than a size of each of the second grains. A width of the first layer is greater than a width of the first contact structure.
