18243627. SEMICONDUCTOR DEVICE AND POWER CONVERSION DEVICE simplified abstract (Kabushiki Kaisha Toshiba)
Contents
SEMICONDUCTOR DEVICE AND POWER CONVERSION DEVICE
Organization Name
Inventor(s)
Fumiyoshi Kawashiro of Tokyo (JP)
SEMICONDUCTOR DEVICE AND POWER CONVERSION DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18243627 titled 'SEMICONDUCTOR DEVICE AND POWER CONVERSION DEVICE
The semiconductor device described in the patent application includes a semiconductor chip with drain, source, and gate electrodes, as well as mold layers and coating films.
- The semiconductor chip has drain, source, and gate regions on different surfaces, with corresponding electrodes provided on each region.
- Mold layers are placed on the side surfaces of the semiconductor chip, source, and gate electrodes.
- Coating films are applied to the drain, source, and gate electrodes, as well as the mold layers.
Potential Applications: This technology could be used in various electronic devices that require efficient semiconductor components, such as smartphones, tablets, and computers.
Problems Solved: The technology addresses the need for reliable and high-performance semiconductor devices with improved durability and functionality.
Benefits: The semiconductor device offers enhanced performance, reliability, and longevity compared to traditional devices. It also provides better protection against environmental factors.
Commercial Applications: This technology has significant commercial potential in the consumer electronics industry, where high-quality semiconductor components are in demand for various products.
Prior Art: Readers interested in exploring prior art related to this technology may start by researching similar semiconductor devices and manufacturing processes in the field of electronics.
Frequently Updated Research: Researchers and industry professionals may find updated studies on semiconductor materials, device design, and manufacturing techniques relevant to this technology.
Questions about the semiconductor device: 1. How does this semiconductor device improve upon existing technologies in the market? 2. What are the potential cost implications of implementing this technology in mass-produced electronic devices?
Original Abstract Submitted
According to one embodiment, a semiconductor device includes a semiconductor chip, drain, source and gate electrodes, mold layers and first and second coating films. The semiconductor chip has a drain region on a first surface, and source and gate regions on a second surface facing the first surface. The drain electrode is provided on the drain region. The source electrode is provided on the source region. The gate electrode is provided on the gate region. The mold layers are provided on side surfaces of the semiconductor chip, the source and gate electrodes. The first coating films are provided on a lower surface and side surfaces of the drain electrode, an upper surface of the source electrode, and an upper surface of the gate electrode. The second coating films are provided on an upper surface and side surfaces of the mold layers.
