18243350. MEMORY DEVICE, METHOD OF CALIBRATING SIGNAL LEVEL THEREOF, AND MEMORY SYSTEM HAVING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)

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MEMORY DEVICE, METHOD OF CALIBRATING SIGNAL LEVEL THEREOF, AND MEMORY SYSTEM HAVING THE SAME

Organization Name

SAMSUNG ELECTRONICS CO., LTD.

Inventor(s)

Youngdo Um of Suwon-si (KR)

Jaewoo Park of Suwon-si (KR)

Younghoon Son of Suwon-si (KR)

Youngdon Choi of Suwon-si (KR)

Junghwan Choi of Suwon-si (KR)

MEMORY DEVICE, METHOD OF CALIBRATING SIGNAL LEVEL THEREOF, AND MEMORY SYSTEM HAVING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 18243350 titled 'MEMORY DEVICE, METHOD OF CALIBRATING SIGNAL LEVEL THEREOF, AND MEMORY SYSTEM HAVING THE SAME

Simplified Explanation

The abstract describes a method for calibrating the signal level of a memory device. The method involves several calibration techniques for different signaling methods, such as non-return-to-zero (NRZ) and pulse amplitude modulation level-4 (PAM4).

  • Pull-up code and pull-down code calibrations are performed to calibrate the signal level using a ZQ calibration for NRZ signaling.
  • A most significant bit (MSB) code calibration is performed using an MSB additional driver for PAM4 signaling.
  • A least significant bit (LSB) code calibration is performed using an LSB additional driver for PAM4 signaling.

Potential applications of this technology:

  • Memory devices in various electronic devices such as smartphones, computers, and servers.
  • Communication systems that utilize NRZ and PAM4 signaling methods.

Problems solved by this technology:

  • Ensures accurate signal level calibration for memory devices using different signaling methods.
  • Improves the reliability and performance of memory devices.

Benefits of this technology:

  • Enhanced signal level calibration for memory devices, leading to improved data transmission and storage.
  • Enables memory devices to support different signaling methods, increasing their versatility and compatibility.


Original Abstract Submitted

A method of calibrating a signal level of a memory device includes performing pull-up code and pull-down code calibrations, using a ZQ calibration for non-return-to-zero (NRZ) signaling, performing a most significant bit (MSB) code calibration, using an MSB additional driver for pulse amplitude modulation level-4 (PAM4) signaling, and performing a least significant bit (LSB) code calibration using an LSB additional driver for the PAM4 signaling.