18243185. METHOD FOR MANUFACTURING MASK PATTERN AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING THE MASK PATTERN simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
METHOD FOR MANUFACTURING MASK PATTERN AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING THE MASK PATTERN
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METHOD FOR MANUFACTURING MASK PATTERN AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING THE MASK PATTERN - A simplified explanation of the abstract
This abstract first appeared for US patent application 18243185 titled 'METHOD FOR MANUFACTURING MASK PATTERN AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING THE MASK PATTERN
Simplified Explanation: The patent application describes a method for manufacturing a mask pattern by forming trenches of different widths in a mold mask layer on a substrate.
- Key Features and Innovation:
- Formation of a pre-mold mask pattern with a first trench of a specific width.
- Creation of a mold mask pattern with a second trench of a different width connected to the first trench.
- Generation of a process mask pattern that fills the trenches and remains on the substrate after removing the mold mask pattern.
Potential Applications: This technology can be applied in the semiconductor industry for the fabrication of integrated circuits, microprocessors, and other electronic devices requiring precise mask patterns.
Problems Solved: This method addresses the need for manufacturing intricate mask patterns with varying trench widths for different applications in the semiconductor and electronics industries.
Benefits:
- Enables the production of complex mask patterns with precise trench dimensions.
- Enhances the efficiency and accuracy of mask pattern manufacturing processes.
- Facilitates the development of advanced electronic devices with high-performance capabilities.
Commercial Applications: The technology can be utilized by semiconductor manufacturers, electronic component suppliers, and research institutions involved in the production of cutting-edge electronic devices.
Prior Art: Prior research in the field of semiconductor manufacturing and lithography techniques may provide insights into similar methods for creating mask patterns with varying trench widths.
Frequently Updated Research: Ongoing research in semiconductor lithography, nanofabrication, and mask design may offer new advancements and techniques related to the manufacturing of intricate mask patterns.
Questions about Mask Pattern Manufacturing: 1. How does the method described in the patent application improve the precision and efficiency of mask pattern fabrication? 2. What are the potential challenges or limitations associated with creating mask patterns with trenches of different widths?
Original Abstract Submitted
A method for manufacturing a mask pattern includes forming a mold mask layer on a substrate. A pre-mold mask pattern that includes a first trench extending in a first direction is formed by etching the mold mask layer. The first trench has a first width in a second direction crossing the first direction. A mold mask pattern that includes a second trench connected to the first trench is formed by etching the pre-mold mask pattern. The second trench has a second width different from the first width in the second direction. The second trench is adjacent to the first trench in the first direction. A process mask pattern that fills the first and second trenches is formed in the mold mask pattern and disposed on the substrate. The mold mask pattern is removed and the process mask pattern remains disposed on the substrate after removing the mold mask pattern.
