18243122. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract (Samsung Electronics Co., Ltd.)
Contents
- 1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.10.1 How does the height difference between the metal layers in the cell pad structures and the gate electrode impact the overall performance of the semiconductor device?
- 1.10.2 Are there any alternative designs or configurations that could achieve similar results in optimizing the layout of semiconductor devices?
- 1.11 Original Abstract Submitted
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
Organization Name
Inventor(s)
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A simplified explanation of the abstract
This abstract first appeared for US patent application 18243122 titled 'SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
Simplified Explanation
The semiconductor device described in the abstract includes a substrate with a cell array area and a peripheral circuit area, multiple active areas in the cell array and at least one active area in the peripheral circuit, bit lines in the substrate, cell pad structures with conductive layers, intermediate layers, and metal layers of varying heights, and a gate electrode in the peripheral circuit area with similar layers but at a lower height than the cell pad structures.
- Substrate with cell array and peripheral circuit areas
- Multiple active areas in cell array and at least one in peripheral circuit
- Bit lines in the substrate
- Cell pad structures with conductive, intermediate, and metal layers
- Gate electrode in peripheral circuit area with similar layers but lower height
Potential Applications
The technology described in this patent application could be applied in the manufacturing of advanced semiconductor devices, such as memory chips, processors, and other integrated circuits.
Problems Solved
This technology helps in optimizing the layout and design of semiconductor devices, improving performance and efficiency by efficiently managing the active areas and connections within the device.
Benefits
The benefits of this technology include enhanced functionality, increased speed, reduced power consumption, and overall improved performance of semiconductor devices.
Potential Commercial Applications
- Advanced memory chips
- High-performance processors
- Integrated circuits for various electronic devices
Possible Prior Art
One possible prior art could be the use of similar layer structures in semiconductor devices, but with different configurations or materials.
Unanswered Questions
How does the height difference between the metal layers in the cell pad structures and the gate electrode impact the overall performance of the semiconductor device?
The height difference between the metal layers may affect the conductivity and signal transmission within the device, but the specific impact needs further analysis and testing.
Are there any alternative designs or configurations that could achieve similar results in optimizing the layout of semiconductor devices?
Exploring alternative designs or configurations that can achieve similar optimization in layout and performance could provide valuable insights into the potential improvements in semiconductor technology.
Original Abstract Submitted
A semiconductor device includes a substrate having a cell array area and a peripheral circuit area, a plurality of first active areas defined in the cell array area and at least one second active area defined in the peripheral circuit area, a plurality of bit lines disposed in the substrate, a plurality of cell pad structures including a first conductive layer, a first intermediate layer, and a first metal layer having a first height from an upper surface of the first intermediate layer, and a peripheral circuit gate electrode disposed on the peripheral circuit area of the substrate and including a second conductive layer, a second intermediate layer, and a second metal layer having a second height from an upper surface of the second intermediate layer sequentially disposed on the at least one second active area, the second height being less than the first height.
