18242407. MONITORING UNIT AND SUBSTRATE TREATING APPARATUS INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)

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MONITORING UNIT AND SUBSTRATE TREATING APPARATUS INCLUDING THE SAME

Organization Name

SAMSUNG ELECTRONICS CO., LTD.

Inventor(s)

Yoon Sang Lee of Suwon-si (KR)

Eun Hee Jeang of Suwon-si (KR)

Dong Hyeong Kim of Suwon-si (KR)

Teun Boeren of Suwon-si (KR)

Jeong-Gil Kim of Suwon-si (KR)

Kyung Bin Park of Suwon-si (KR)

Hyuck Shin of Suwon-si (KR)

MONITORING UNIT AND SUBSTRATE TREATING APPARATUS INCLUDING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 18242407 titled 'MONITORING UNIT AND SUBSTRATE TREATING APPARATUS INCLUDING THE SAME

Simplified Explanation

The patent application describes a monitoring unit that measures the power of an EUV beam in real-time as it is transmitted to a substrate in a substrate treating apparatus.

Key Features and Innovation

  • Monitoring unit for real-time measurement of EUV beam power
  • Detector for detecting and monitoring EUV beam power
  • Detector positioned along the path of the EUV beam
  • Detector moves from a mirror assembly to a reticle where the mask pattern is formed

Potential Applications

The technology can be used in semiconductor manufacturing processes, lithography, and other industries that require precise EUV beam power monitoring.

Problems Solved

Ensures accurate and real-time monitoring of EUV beam power, which is crucial for maintaining the quality and consistency of substrate treatment processes.

Benefits

  • Improved accuracy in EUV beam power measurement
  • Real-time monitoring enhances process control
  • Ensures consistent and high-quality substrate treatment

Commercial Applications

Title: Real-time EUV Beam Power Monitoring for Enhanced Semiconductor Manufacturing This technology can be applied in semiconductor fabrication facilities to improve the efficiency and quality of substrate treatment processes, leading to higher yields and reduced production costs.

Prior Art

Information on prior art related to this technology is not provided in the abstract.

Frequently Updated Research

There is no information on frequently updated research relevant to this technology.

Questions about EUV Beam Power Monitoring

Question 1

How does real-time monitoring of EUV beam power benefit substrate treatment processes?

Real-time monitoring of EUV beam power ensures that the substrate is treated with the correct amount of energy, leading to consistent and high-quality results.

Question 2

What are the potential challenges in implementing a monitoring unit for EUV beam power measurement?

Challenges may include the precise positioning of the detector along the path of the EUV beam and ensuring that the monitoring unit does not interfere with the substrate treating process.


Original Abstract Submitted

A monitoring unit for measuring, in real time, the power of an EUV beam transmitted to a substrate and a substrate treating apparatus including the monitoring unit. The substrate treating apparatus comprising a source which generates an EUV beam, a scanner which transfers a mask pattern to a substrate by using the EUV beam, and a monitoring unit which comprises a detector for detecting the EUV beam and monitoring the power of the EUV beam in real time, wherein the detector is disposed on a path along which the EUV beam passes through a first mirror assembly provided in the scanner and moves to a reticle on which the mask pattern is formed.