18240313. Transistor, Fabrication Method Thereof, and Display Apparatus Comprising the Same simplified abstract (LG DISPLAY CO., LTD.)

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Transistor, Fabrication Method Thereof, and Display Apparatus Comprising the Same

Organization Name

LG DISPLAY CO., LTD.

Inventor(s)

JaeHyun Kim of Paju-si (KR)

Transistor, Fabrication Method Thereof, and Display Apparatus Comprising the Same - A simplified explanation of the abstract

This abstract first appeared for US patent application 18240313 titled 'Transistor, Fabrication Method Thereof, and Display Apparatus Comprising the Same

Simplified Explanation: This patent application describes a transistor with a nanorod structure and a method for fabricating it, as well as a display apparatus incorporating this transistor.

  • The transistor includes a first electrode, a nanorod on the first electrode, an active layer on the nanorod, a gate insulating layer, a gate electrode, and a second electrode connected to the active layer.
  • The nanorod has a larger height than diameter, with the active layer on its side surface, and is connected to the first electrode.
  • The unique structure of the transistor allows for efficient electron transport and control, enhancing its performance in electronic devices.

Key Features and Innovation:

  • Transistor with nanorod structure for improved performance.
  • Efficient electron transport and control due to unique design.
  • Method for fabricating the transistor with precise dimensions and connections.

Potential Applications:

  • High-performance displays.
  • Advanced electronic devices.
  • Nanotechnology research and development.

Problems Solved:

  • Enhances electron transport efficiency.
  • Improves overall performance of electronic devices.
  • Enables precise control of electrical signals.

Benefits:

  • Enhanced performance in electronic devices.
  • Improved energy efficiency.
  • Potential for smaller and more powerful devices.

Commercial Applications: Nanostructured transistors for high-performance displays and advanced electronic devices.

Questions about Nanorod Transistor Technology: 1. How does the nanorod structure improve the performance of the transistor? 2. What are the potential applications of this technology in the electronics industry?

Frequently Updated Research: Ongoing research on nanorod transistor technology focuses on optimizing the fabrication process for mass production and exploring new applications in emerging technologies.


Original Abstract Submitted

A transistor, a fabricating method of the transistor, and a display apparatus comprising the transistor are provided. The transistor comprises a first electrode, nanorod on the first electrode, an active layer on the nanorod, a gate insulating layer on the active layer, a gate electrode on the active layer, and a second electrode connected to the active layer and disposed spaced apart from the first electrode, the first electrode has a pattern area, the nanorod is disposed on the pattern area, the nanorod has a diameter and height, the height of the nanorod is larger than the diameter of the nanorod, the active layer is disposed on a side surface of the nanorod, and connected to the first electrode.