18240017. SEMICONDUCTOR DEVICES simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
- 1 SEMICONDUCTOR DEVICES
SEMICONDUCTOR DEVICES
Organization Name
Inventor(s)
Myunghoon Han of Suwon-si (KR)
SEMICONDUCTOR DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 18240017 titled 'SEMICONDUCTOR DEVICES
Simplified Explanation
The semiconductor device described in the abstract includes a gate electrode structure, a memory channel structure, a first division pattern, and first support patterns. The gate electrode structure consists of gate electrodes spaced apart on a substrate, extending in a direction parallel to the substrate's surface. The memory channel structure extends through the gate electrode structure, while the first division pattern and first support patterns are formed on the sidewall of the gate electrode structure.
- Gate electrode structure with spaced gate electrodes
- Memory channel structure extending through gate electrode structure
- First division pattern on sidewall of gate electrode structure
- First support patterns made of conductive material
Potential Applications
The technology described in this patent application could be applied in the development of advanced semiconductor devices for memory storage, data processing, and communication systems.
Problems Solved
This technology addresses the need for improved semiconductor devices with enhanced memory capabilities, efficient data processing, and reliable performance in various electronic applications.
Benefits
The benefits of this technology include increased memory storage capacity, faster data processing speeds, and improved overall performance of semiconductor devices in electronic systems.
Potential Commercial Applications
The potential commercial applications of this technology could be in the manufacturing of memory chips, processors, and other electronic components for consumer electronics, computers, and telecommunications devices.
Possible Prior Art
One possible prior art for this technology could be the development of similar semiconductor devices with gate electrode structures and memory channel structures, but with different configurations or materials used in the fabrication process.
Unanswered Questions
How does this technology compare to existing semiconductor devices in terms of performance and efficiency?
This article does not provide a direct comparison with existing semiconductor devices in terms of performance and efficiency. Further research and testing would be needed to determine the specific advantages and limitations of this technology compared to others on the market.
What are the potential challenges or limitations in implementing this technology on a larger scale for commercial production?
The article does not address the potential challenges or limitations in implementing this technology on a larger scale for commercial production. Factors such as cost, scalability, and compatibility with existing manufacturing processes could be important considerations that need to be explored further.
Original Abstract Submitted
A semiconductor device includes a gate electrode structure, a memory channel structure, a first division pattern, and first support patterns. The gate electrode structure includes gate electrodes spaced apart from each other on a substrate in a first direction perpendicular to an upper surface of the substrate, and each of the gate electrodes extends in a second direction parallel to the upper surface of the substrate. The memory channel structure extends through the gate electrode structure on the substrate. The first division pattern is formed on a sidewall of the gate electrode structure in a third direction parallel to the upper surface of the substrate and crossing the second direction, and extends in the second direction. The first support patterns are spaced apart from each other in the second direction on the first division pattern, and each of the first support patterns includes a conductive material.
