18239847. INTEGRATED CIRCUIT DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
Contents
INTEGRATED CIRCUIT DEVICE
Organization Name
Inventor(s)
Hyungsuk Jung of Suwon-si (KR)
INTEGRATED CIRCUIT DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18239847 titled 'INTEGRATED CIRCUIT DEVICE
Simplified Explanation
The patent application describes an integrated circuit device with a capacitor structure that includes a first electrode, a dielectric film composite, and a second electrode. The dielectric film composite consists of a first dielectric film with an anti-ferroelectric material, a second dielectric filler with a ferroelectric material, and a third dielectric filler with a paraelectric material.
- The integrated circuit device includes a transistor on a substrate.
- The capacitor structure is electrically connected to the transistor.
- The dielectric film composite in the capacitor structure has a complex composition with different types of dielectric materials.
- The second dielectric filler with a ferroelectric material contributes to the overall performance of the capacitor.
- The third dielectric filler with a paraelectric material helps enhance the properties of the capacitor structure.
Potential applications of this technology:
- Integrated circuits
- Memory devices
- Sensor devices
Problems solved by this technology:
- Improved performance of capacitors in integrated circuits
- Enhanced reliability of memory devices
- Increased efficiency of sensor devices
Benefits of this technology:
- Higher capacitance values
- Better stability and reliability
- Improved overall performance of integrated circuit devices
Original Abstract Submitted
An integrated circuit device includes a transistor disposed on a substrate and a capacitor structure electrically connected with the transistor, wherein the capacitor structure includes a first electrode, a dielectric film composite disposed on the first electrode, and a second electrode disposed on the dielectric film composite, and the dielectric film composite includes a first dielectric film including an anti-ferroelectric material, a second dielectric filler distributed and disposed in the first dielectric film, the second dielectric filler including a ferroelectric material, and a third dielectric filler distributed and disposed in the first dielectric film, the third dielectric filler including a paraelectric material and having an average diameter which is less than an average diameter of the second dielectric filler.
