18237962. SEMICONDUCTOR DEVICES AND DATA STORAGE SYSTEMS INCLUDING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
Contents
- 1 SEMICONDUCTOR DEVICES AND DATA STORAGE SYSTEMS INCLUDING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICES AND DATA STORAGE SYSTEMS INCLUDING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 How does this technology compare to existing semiconductor device structures in terms of performance and reliability?
- 1.11 What are the specific manufacturing processes involved in creating the second substrate structure with gate electrodes and channel structures?
- 1.12 Original Abstract Submitted
SEMICONDUCTOR DEVICES AND DATA STORAGE SYSTEMS INCLUDING THE SAME
Organization Name
Inventor(s)
Joonyoung Kwon of Suwon-si (KR)
SEMICONDUCTOR DEVICES AND DATA STORAGE SYSTEMS INCLUDING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18237962 titled 'SEMICONDUCTOR DEVICES AND DATA STORAGE SYSTEMS INCLUDING THE SAME
Simplified Explanation
The semiconductor device described in the patent application includes a first substrate structure with circuit elements, interconnection structures, and metal bonding layers, as well as a second substrate structure connected to the first substrate structure with gate electrodes, channel structures, interconnection structures, metal bonding layers, and dummy pattern layers.
- The first substrate structure consists of a substrate with circuit elements and interconnection structures, along with metal bonding layers on top.
- The second substrate structure features a plating layer, gate electrodes, channel structures, a separation region, interconnection structures, metal bonding layers, and dummy pattern layers.
- The dummy pattern layers are made of an insulating material and are located between the metal bonding layers in the second substrate structure.
Potential Applications
This technology could be applied in the manufacturing of advanced semiconductor devices, such as integrated circuits and microprocessors.
Problems Solved
This innovation helps improve the performance and reliability of semiconductor devices by enhancing the interconnection structures and metal bonding layers.
Benefits
The benefits of this technology include increased efficiency, reduced power consumption, and improved signal transmission in semiconductor devices.
Potential Commercial Applications
The potential commercial applications of this technology could be in the electronics industry, specifically in the production of high-performance computing devices.
Possible Prior Art
One possible prior art for this technology could be the use of dummy pattern layers in semiconductor devices to improve signal integrity and reduce interference.
Unanswered Questions
How does this technology compare to existing semiconductor device structures in terms of performance and reliability?
This article does not provide a direct comparison with existing semiconductor device structures, so it is unclear how this technology stacks up against current solutions in the industry.
What are the specific manufacturing processes involved in creating the second substrate structure with gate electrodes and channel structures?
The patent abstract does not delve into the specific manufacturing processes used to create the second substrate structure, leaving a gap in understanding the practical implementation of this technology.
Original Abstract Submitted
A semiconductor device includes a first substrate structure including a substrate, circuit elements on the substrate, a first interconnection structure on the circuit elements, and first metal bonding layers on the first interconnection structure; and a second substrate structure connected to the first substrate structure, and the second substrate structure includes: a plating layer; gate electrodes stacked and spaced apart from each other in a first direction below the plating layer; channel structures penetrating through the gate electrodes and extending in the first direction; a separation region penetrating through the gate electrodes and extending in a second direction; a second interconnection structure below the gate electrodes and the channel structures; second metal bonding layers below the second interconnection structure and connected to the first metal bonding layers; and dummy pattern layers between the second metal bonding layers, extending in the second direction, and including an insulating material.
