18237661. MEMORY DEVICE INCLUDING STAIRCASE STRUCTURES AND ADJACENT TRENCH STRUCTURES simplified abstract (Micron Technology, Inc.)

MEMORY DEVICE INCLUDING STAIRCASE STRUCTURES AND ADJACENT TRENCH STRUCTURES

Organization Name

Micron Technology, Inc.

Inventor(s)

Shruthi Kumara Vadivel of Boise ID (US)

Harsh Narendrakumar Jain of Boise ID (US)

Richard T. Housley of Boise ID (US)

Zhenxing Han of Sunnyvale CA (US)

Scott L. Light of Boise ID (US)

Qinglin Zeng of Boise ID (US)

Hsiao-Kuan Yuan of Boise ID (US)

Jordan Chess of Boise ID (US)

Xiaosong Zhang of Boise ID (US)

MEMORY DEVICE INCLUDING STAIRCASE STRUCTURES AND ADJACENT TRENCH STRUCTURES - A simplified explanation of the abstract

This abstract first appeared for US patent application 18237661 titled 'MEMORY DEVICE INCLUDING STAIRCASE STRUCTURES AND ADJACENT TRENCH STRUCTURES

Simplified Explanation

- Apparatuses and methods for forming tiers with staircase structures and trench structures - Tiers with conductive materials forming staircase structures and control gates for memory cells - First trench structure adjacent to the staircase structures - Second trench structure adjacent to the first trench structure

Potential Applications

- Memory storage devices - Semiconductor manufacturing - Integrated circuits

Problems Solved

- Efficient memory cell organization - Improved semiconductor device performance - Enhanced data storage capacity

Benefits

- Increased memory storage density - Enhanced data processing speed - Improved overall device efficiency

Original Abstract Submitted

Some embodiments include apparatuses and methods of forming the apparatuses. One of the apparatuses includes tiers located one over another; a first staircase structure formed in the tiers; a second staircase structure formed in the tiers adjacent the first staircase structure, respective portions of conductive materials in the tiers forming a part of the first and second staircase structure and a part of respective control gates associated with memory cells; a first trench structure formed in the tiers adjacent the first staircase structure and the second staircase structure, the first trench structure including length in a direction from the first staircase structure to the second staircase structure; and a second trench structure formed in the tiers adjacent the first trench structure, the second trench structure including a length in the direction from the first staircase structure to the second staircase structure.