18237309. INTEGRATED FLAG BYTE READ DURING FAILED BYTE COUNT READ COMPENSATION IN A MEMORY DEVICE simplified abstract (Micron Technology, Inc.)

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INTEGRATED FLAG BYTE READ DURING FAILED BYTE COUNT READ COMPENSATION IN A MEMORY DEVICE

Organization Name

Micron Technology, Inc.

Inventor(s)

Nagendra Prasad Ganesh Rao of Folsom CA (US)

INTEGRATED FLAG BYTE READ DURING FAILED BYTE COUNT READ COMPENSATION IN A MEMORY DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18237309 titled 'INTEGRATED FLAG BYTE READ DURING FAILED BYTE COUNT READ COMPENSATION IN A MEMORY DEVICE

Simplified Explanation

Control logic in a memory device processes read requests by determining failed byte count and reading metadata concurrently.

  • Control logic receives a read request for a specific segment of the memory array.
  • Initiates a failed byte count read operation on the segment to determine the number of failed bytes.
  • Reads metadata stored in a flag byte corresponding to the segment simultaneously with the failed byte count read operation.
  • Configures parameters for the read operation based on the failed byte count and metadata from the flag byte.

Potential Applications

  • Memory devices with improved error detection and correction capabilities.
  • Enhanced data retrieval efficiency in memory arrays.

Problems Solved

  • Efficiently detecting and correcting errors in memory arrays.
  • Optimizing read operations based on failed byte count and metadata.

Benefits

  • Improved reliability and data integrity in memory devices.
  • Enhanced performance and efficiency in reading data from memory arrays.


Original Abstract Submitted

Control logic in a memory device receives a request to perform a read operation to read data from a memory array of a memory device, the request comprising an indication of a segment of the memory array where the data is stored, initiates a failed byte count read operation on the segment of the memory array to determine a failed byte count, and reads metadata stored in a flag byte corresponding to the segment of the memory array concurrently with the failed byte count read operation. The control logic further configures one or more parameters associated with the read operation based on the failed byte count and at least a portion of the metadata read from the flag byte.