18237292. MEASUREMENT METHOD AND MEASUREMENT DEVICE simplified abstract (KABUSHIKI KAISHA TOSHIBA)
Contents
MEASUREMENT METHOD AND MEASUREMENT DEVICE
Organization Name
Inventor(s)
Takuma Hara of Kanazawa Ishikawa (JP)
Tatsuya Ohguro of Kanazawa Ishikawa (JP)
Shigeru Nakajima of Komatsu Ishikawa (JP)
Katsura Miyashita of Naka Kanagawa (JP)
Yasuhisa Oomuro of Komatsu Ishikawa (JP)
MEASUREMENT METHOD AND MEASUREMENT DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18237292 titled 'MEASUREMENT METHOD AND MEASUREMENT DEVICE
Simplified Explanation:
The patent application describes a method for measuring the reverse recovery charge of a semiconductor element by considering the parasitic inductances of the measurement device at different conditions.
Key Features and Innovation:
- Measurement method for reverse recovery charge of a semiconductor element
- Accounts for parasitic inductances of the measurement device
- Estimation of true value of reverse recovery charge when parasitic inductance is zero
Potential Applications: This technology can be applied in the semiconductor industry for accurate measurement of reverse recovery charge in diode components.
Problems Solved: This technology addresses the challenge of accurately measuring reverse recovery charge in semiconductor elements due to parasitic inductances.
Benefits:
- Improved accuracy in measuring reverse recovery charge
- Enhanced understanding of semiconductor element behavior
- Facilitates better design and optimization of semiconductor components
Commercial Applications: Title: Semiconductor Reverse Recovery Charge Measurement Technology This technology can be commercially utilized in semiconductor manufacturing companies to enhance the quality control processes and improve the efficiency of semiconductor component design.
Prior Art: Readers can explore prior research on reverse recovery charge measurement methods in the semiconductor industry to understand the evolution of this technology.
Frequently Updated Research: Researchers are constantly working on refining measurement techniques for semiconductor elements to enhance the performance and reliability of electronic devices.
Questions about Semiconductor Reverse Recovery Charge Measurement Technology: 1. How does this technology impact the efficiency of semiconductor manufacturing processes? 2. What are the potential implications of accurate reverse recovery charge measurement in the development of advanced electronic devices?
Original Abstract Submitted
A measurement method includes determining a first relationship by measuring a reverse recovery charge of a semiconductor element at a plurality of conditions of a measurement device. The measurement device has mutually-different parasitic inductances at the plurality of conditions. The semiconductor element includes a diode component. The first relationship is between the parasitic inductance and a measured value of the reverse recovery charge. The method includes estimating a true value of the reverse recovery charge when the parasitic inductance is zero based on the first relationship.
