18236925. SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING simplified abstract (KABUSHIKI KAISHA TOSHIBA)
Contents
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING
Organization Name
Inventor(s)
Masatsugu Nagai of Nomi Ishikawa (JP)
Shingo Sato of Kanazawa Ishikawa (JP)
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING - A simplified explanation of the abstract
This abstract first appeared for US patent application 18236925 titled 'SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING
Simplified Explanation:
This semiconductor device includes a semiconductor layer with multiple regions, electrodes, a control electrode, and a connection region. The connection region contains compounds of metallic elements and silicon, facilitating the device's functionality.
- The semiconductor layer has distinct regions and electrodes for efficient operation.
- The connection region, containing metallic element compounds, plays a crucial role in the device's performance.
- The control electrode helps regulate the device's functions.
Key Features and Innovation:
- Semiconductor layer with multiple regions and electrodes.
- Connection region with metallic element compounds for enhanced functionality.
- Control electrode for regulating device operations.
Potential Applications:
This technology can be applied in various semiconductor devices, such as transistors, diodes, and integrated circuits.
Problems Solved:
This technology addresses the need for efficient semiconductor devices with improved performance and functionality.
Benefits:
- Enhanced device performance.
- Improved functionality.
- Efficient regulation of operations.
Commercial Applications:
Potential commercial applications include the semiconductor industry, electronics manufacturing, and research institutions.
Prior Art:
Researchers can explore prior art related to semiconductor device technology, metallic element compounds, and silicon-based devices.
Frequently Updated Research:
Stay updated on advancements in semiconductor device technology, metallic element compounds, and silicon-based devices for potential improvements and innovations.
Questions about Semiconductor Devices:
1. How do metallic element compounds enhance the performance of semiconductor devices? 2. What are the potential future advancements in semiconductor device technology?
Original Abstract Submitted
A semiconductor device includes a semiconductor layer, first and second electrodes, a control electrode, and a connection region. The semiconductor layer includes first to third semiconductor regions. The connection region is positioned between the first electrode and the first semiconductor region. The connection region includes a compound of a first metallic element and Si, and a compound of Pt and Si. The first metallic element is at least one selected from the group consisting of Ti, V, Cr, Zr, Mo, Hf, Ta, and W. The connection region includes a first part adjacent to an n-type region of the semiconductor layer in a first direction. A peak position of a concentration distribution of the first metallic element in the first direction of the first part is between the n-type region and a peak position of a concentration distribution of Pt in the first direction of the first part.
