18236637. SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING THE SAME, AND ELECTRONIC SYSTEM INCLUDING SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
Contents
- 1 SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING THE SAME, AND ELECTRONIC SYSTEM INCLUDING SEMICONDUCTOR DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING THE SAME, AND ELECTRONIC SYSTEM INCLUDING SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Commercial Applications
- 1.9 Questions about the Technology
- 1.10 Original Abstract Submitted
SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING THE SAME, AND ELECTRONIC SYSTEM INCLUDING SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Kwangmin Park of Suwon-si (KR)
Dongsung Choi of Suwon-si (KR)
SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING THE SAME, AND ELECTRONIC SYSTEM INCLUDING SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18236637 titled 'SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING THE SAME, AND ELECTRONIC SYSTEM INCLUDING SEMICONDUCTOR DEVICE
Simplified Explanation
The semiconductor device described in the patent application consists of a substrate, a stack structure with alternating layers of insulating material and a gate electrode, a channel layer that crosses the substrate through the stack structure, and a gate dielectric layer between the gate electrode and the channel layer. The gate dielectric layer includes a tunneling layer, a charge storage layer, and a blocking layer in sequence on the channel layer, with the tunneling layer containing a carbon-containing layer closer to the channel layer than the charge storage layer.
- The semiconductor device has a unique gate dielectric layer structure with a carbon-containing tunneling layer.
- The tunneling layer is positioned closer to the channel layer than the charge storage layer.
- The stack structure includes an interlayer insulating layer and a gate electrode.
- The channel layer extends in a direction crossing the substrate through the stack structure.
Potential Applications
This technology could be applied in the development of advanced semiconductor devices for various electronic applications, including memory storage, logic circuits, and microprocessors.
Problems Solved
This innovation addresses the need for improved performance and efficiency in semiconductor devices by optimizing the gate dielectric layer structure for enhanced functionality.
Benefits
The benefits of this technology include increased speed, reduced power consumption, and enhanced reliability in semiconductor devices, leading to improved overall performance in electronic systems.
Commercial Applications
- Memory storage devices
- Logic circuits
- Microprocessors
Questions about the Technology
What are the potential implications of using a carbon-containing tunneling layer in semiconductor devices?
The use of a carbon-containing tunneling layer can potentially improve the performance and efficiency of semiconductor devices by enhancing charge transport properties.
How does the unique gate dielectric layer structure contribute to the overall functionality of the semiconductor device?
The unique gate dielectric layer structure, including the carbon-containing tunneling layer, helps to optimize the device's operation by facilitating efficient charge transfer and storage.
Original Abstract Submitted
A semiconductor device includes a substrate; a stack structure including an interlayer insulating layer and a gate electrode which are alternately stacked on the substrate; a channel layer extending in a direction crossing the substrate through the stack structure; and a gate dielectric layer between the gate electrode and the channel layer, the gate dielectric layer including a tunneling layer, a charge storage layer, and a blocking layer sequentially on the channel layer, wherein the tunneling layer includes a carbon-containing layer including carbon, and the tunneling layer is positioned closer to the channel layer than it is to the charge storage layer.
