18236501. SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Hyungeun Choi of Suwon-si (KR)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18236501 titled 'SEMICONDUCTOR DEVICE
The semiconductor device described in the abstract consists of various layers and structures, including substrates, dielectric structures, transistors, bonding pads, and memory cell structures.
- The device features a lower substrate with a lower dielectric structure and a transistor, as well as an upper dielectric structure with an upper substrate and a memory cell structure.
- Both lower and upper bonding pads are present in the dielectric structures, with the top surface of the lower pad in contact with the bottom surface of the upper pad.
- The lower and upper bonding pads overlap the memory cell structure, providing a connection between the different layers of the device.
Potential Applications: This technology could be used in the development of advanced semiconductor devices for various electronic applications, such as memory storage, computing, and communication systems.
Problems Solved: This innovation addresses the need for efficient and reliable connections between different layers of a semiconductor device, improving overall performance and functionality.
Benefits: The overlapping bonding pads enhance the connectivity and integration of the various components within the semiconductor device, leading to improved efficiency and performance.
Commercial Applications: This technology has the potential to be utilized in the production of high-performance electronic devices for consumer electronics, industrial applications, and telecommunications equipment.
Questions about the technology: 1. How does the overlapping bonding pad design improve the connectivity of the semiconductor device? 2. What are the specific advantages of having a memory cell structure between the upper substrate and the upper dielectric structure?
Original Abstract Submitted
A semiconductor device includes a lower substrate, a lower dielectric structure on the lower substrate, a transistor between the lower substrate and the lower dielectric structure, a lower bonding pad in the lower dielectric structure, an upper dielectric structure on the lower dielectric structure, an upper substrate on the upper dielectric structure, a memory cell structure between the upper substrate and the upper dielectric structure, and an upper bonding pad in the upper dielectric structure. A top surface of the lower bonding pad is in contact with a bottom surface of the upper bonding pad. The lower bonding pad and the upper bonding pad overlap the memory cell structure.
