18235653. SUBSTRATE PROCESSING APPARATUS simplified abstract (Samsung Electronics Co., Ltd.)
Contents
SUBSTRATE PROCESSING APPARATUS
Organization Name
Inventor(s)
Dougyong Sung of Suwon-si (KR)
SUBSTRATE PROCESSING APPARATUS - A simplified explanation of the abstract
This abstract first appeared for US patent application 18235653 titled 'SUBSTRATE PROCESSING APPARATUS
The abstract describes a substrate processing apparatus with two plasma regions, a substrate support, distribution plates, plasma generating devices, and a controller.
- The apparatus includes an upper chamber for the first plasma region and a lower chamber for the second plasma region.
- A substrate support is located below the plasma regions in the lower chamber to hold the substrate.
- Distribution plates between the plasma regions in the upper chamber inject ions from the first plasma onto the substrate.
- A first plasma generating device in the upper chamber creates the first plasma from a first process gas.
- A second plasma generating device in the lower chamber generates the second plasma from a second process gas.
- The controller alternately operates the first and second plasma generating devices.
Potential Applications: - Semiconductor manufacturing - Thin film deposition - Surface modification processes
Problems Solved: - Efficient plasma processing - Uniform plasma distribution - Enhanced substrate treatment
Benefits: - Improved substrate processing quality - Increased productivity - Cost-effective plasma treatment
Commercial Applications: Title: Advanced Plasma Processing System for Semiconductor Manufacturing This technology can be used in semiconductor fabrication facilities to enhance plasma processing efficiency, leading to higher quality semiconductor products and increased production output.
Questions about the technology: 1. How does this substrate processing apparatus improve plasma treatment compared to traditional methods? 2. What are the specific advantages of using two plasma regions in the processing chamber?
Original Abstract Submitted
A substrate processing apparatus includes a chamber including an upper chamber defining a first plasma region for generating first plasma and a lower chamber defining a second plasma region for generating second plasma; a substrate support below the first and second plasma regions in the lower chamber, and configured to support a substrate; distribution plates between the first and second plasma regions in the upper chamber, and configured to inject ions included in the first plasma onto the substrate; a first plasma generating device on a side of the upper chamber and configured to generate the first plasma from a first process gas; a second plasma generating device on a side of the lower chamber and configured to generate the second plasma from a second process gas; and a controller that alternately operates the first plasma generating device and the second plasma generating device.
