18235000. THREE-DIMENSIONAL FERROELECTRIC MEMORY DEVICES simplified abstract (Samsung Electronics Co., Ltd.)
Contents
- 1 THREE-DIMENSIONAL FERROELECTRIC MEMORY DEVICES
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 THREE-DIMENSIONAL FERROELECTRIC MEMORY DEVICES - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
THREE-DIMENSIONAL FERROELECTRIC MEMORY DEVICES
Organization Name
Inventor(s)
Kyunghwan Lee of Suwon-si (KR)
THREE-DIMENSIONAL FERROELECTRIC MEMORY DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 18235000 titled 'THREE-DIMENSIONAL FERROELECTRIC MEMORY DEVICES
Simplified Explanation
The three-dimensional ferroelectric memory device described in the abstract includes various components such as a channel, gate insulation pattern, conductive pattern, ferroelectric pattern, gate electrode, and source/drain patterns. Here is a simplified explanation of the patent application:
- The device has a vertical channel on a substrate with a gate insulation pattern and conductive pattern surrounding it.
- A ferroelectric pattern contacts the conductive pattern, while a gate electrode contacts the ferroelectric pattern.
- First and second source/drain patterns contact the lower and upper surfaces of the channel, respectively.
Potential Applications
This technology could be used in:
- High-density memory storage devices
- Non-volatile memory applications
Problems Solved
This technology addresses:
- Data retention issues in memory devices
- Increasing demand for faster and more efficient memory solutions
Benefits
The benefits of this technology include:
- Improved data retention capabilities
- Enhanced memory performance
- Increased memory density
Potential Commercial Applications
The potential commercial applications of this technology could be in:
- Consumer electronics
- Data storage devices
Possible Prior Art
One possible prior art for this technology could be:
- Three-dimensional memory devices with similar structures and components
Unanswered Questions
How does this technology compare to existing memory devices in terms of speed and efficiency?
This technology offers faster and more efficient memory solutions compared to traditional memory devices. It addresses data retention issues and provides increased memory density.
What are the potential challenges in scaling up this technology for mass production?
Scaling up this technology for mass production may face challenges related to manufacturing processes, cost-effectiveness, and integration with existing memory technologies. Further research and development may be needed to overcome these challenges.
Original Abstract Submitted
A three-dimensional ferroelectric memory device includes a channel on a substrate and extending in a vertical direction substantially perpendicular to an upper surface of the substrate, a gate insulation pattern and a conductive pattern stacked on and surrounding a sidewall of the channel in a horizontal direction substantially parallel to the upper surface of the substrate, a ferroelectric pattern contacting a portion of an outer sidewall of the conductive pattern, a gate electrode contacting the ferroelectric pattern, and first and second source/drain patterns contacting lower and upper surfaces, respectively, of the channel.
