18234636. READ CONTROL SIGNAL GENERATION FOR MEMORY simplified abstract (Micron Technology, Inc.)

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READ CONTROL SIGNAL GENERATION FOR MEMORY

Organization Name

Micron Technology, Inc.

Inventor(s)

Jaeil Kim of Boise ID (US)

READ CONTROL SIGNAL GENERATION FOR MEMORY - A simplified explanation of the abstract

This abstract first appeared for US patent application 18234636 titled 'READ CONTROL SIGNAL GENERATION FOR MEMORY

Simplified Explanation

The system described in the patent application includes memory with a bank area and a channel area, as well as control circuitry to receive commands to access the memory. The control circuitry can provide a bank strobe signal for accessing memory in the bank area and at least two channel strobe signals for accessing memory in the channel area. The channel strobe signal may process a smaller amount of data than the bank strobe signal.

  • Memory system with bank and channel areas
  • Control circuitry for accessing memory
  • Bank strobe signal for bank area memory access
  • Channel strobe signals for channel area memory access
  • Channel strobe signal processes smaller amount of data
      1. Potential Applications
  • Computer systems
  • Data storage devices
  • Networking equipment
      1. Problems Solved
  • Efficient memory access
  • Improved data processing speed
  • Enhanced system performance
      1. Benefits
  • Faster data retrieval
  • Increased system efficiency
  • Optimal memory utilization


Original Abstract Submitted

A system includes memory having a bank area and a channel area. The system further includes control circuitry to receive a command to access the memory. Responsive to receiving the command to access the memory, the control circuitry can provide a bank strobe signal for accessing memory in the bank area and at least two channel strobe signals for accessing memory in the channel area. The channel strobe signal may process a smaller amount of data than that processed by the bank strobe signal.