18234145. SHALLOW TRENCH ISOLATION RECESS CONTROL simplified abstract (Micron Technology, Inc.)
Contents
SHALLOW TRENCH ISOLATION RECESS CONTROL
Organization Name
Inventor(s)
SHALLOW TRENCH ISOLATION RECESS CONTROL - A simplified explanation of the abstract
This abstract first appeared for US patent application 18234145 titled 'SHALLOW TRENCH ISOLATION RECESS CONTROL
Simplified Explanation
The patent application describes a memory device with enhanced electric isolation of a data line contact to a memory cell compared to a cell contact to the memory cell.
- During fabrication, the dielectric isolation region around the memory cell's active area is controlled to improve electric isolation.
- A portion of the dielectric isolation region is recessed to create a corner with the conductive region.
- The corner is filled with dielectric material, and the data line contact is formed to contact this material and the conductive region.
- The cell contact is also formed to contact the dielectric material, ensuring it is between the cell contact and the data line contact.
- Potential Applications
- Memory devices in electronic devices - Integrated circuits in computers and smartphones
- Problems Solved
- Improved electric isolation of data line contacts in memory cells - Enhanced performance and reliability of memory devices
- Benefits
- Better data integrity and reliability - Increased performance of memory devices - Longer lifespan of memory cells
Original Abstract Submitted
A variety of applications can include an apparatus having a memory device in which, during fabrication of the memory device, processing a dielectric isolation region about an active area of a memory cell is controlled to provide enhanced electric isolation of a data line contact to the memory cell with respect to a cell contact to the memory cell. A portion of the dielectric isolation region can be recessed, creating a corner between the dielectric isolation region and a conductive region, where the conductive region is material for the active area. The corner can be filled with a dielectric material and the data line contact can be formed contacting the dielectric material and coupled to the conductive region. The cell contact can be formed to the memory cell contacting the dielectric material such that the dielectric material is between the cell contact and the data line contact.
