18232948. SEMICONDUCTOR MEMORY DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
- 1 SEMICONDUCTOR MEMORY DEVICE
SEMICONDUCTOR MEMORY DEVICE
Organization Name
Inventor(s)
Nag Yong Choi of Suwon-si (KR)
Sun Gyung Hwang of Suwon-si (KR)
SEMICONDUCTOR MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18232948 titled 'SEMICONDUCTOR MEMORY DEVICE
The semiconductor memory device described in the patent application includes a substrate with a cell array area and an extension area, a mold structure with gate electrodes stacked in a stair shape on the substrate, and mold insulating films alternately stacked with the gate electrodes. Additionally, there are channel structures on the cell array area that intersect the gate electrodes, cell contacts on the extension area connected to the gate electrodes, and a first interlayer insulating film covering the channel structures and cell contacts.
- The semiconductor memory device features a unique design with gate electrodes stacked in a stair shape on the substrate, providing efficient memory storage capabilities.
- The channel structures intersecting the gate electrodes enhance the performance and functionality of the memory device.
- The cell contacts connected to the gate electrodes ensure proper communication and data transfer within the device.
- The mold insulating films play a crucial role in insulating the gate electrodes and ensuring the device's reliability and durability.
Potential Applications
The semiconductor memory device can be utilized in various electronic devices requiring high-speed and reliable memory storage, such as smartphones, tablets, and computers.
Problems Solved
This technology addresses the need for efficient and reliable memory storage solutions in modern electronic devices.
Benefits
The semiconductor memory device offers enhanced performance, reliability, and durability compared to traditional memory storage solutions.
Commercial Applications
The technology can be commercialized for the production of high-performance electronic devices, potentially impacting the consumer electronics market significantly.
Prior Art
There is no specific information provided on prior art related to this particular semiconductor memory device.
Frequently Updated Research
There is ongoing research in the field of semiconductor memory devices to further enhance their performance and capabilities.
Questions about Semiconductor Memory Device
Question 1
How does the unique design of the gate electrodes in this semiconductor memory device contribute to its efficiency and performance?
Answer
The unique stair-shaped stacking of gate electrodes in this semiconductor memory device allows for more efficient data storage and retrieval processes, enhancing the device's overall performance and speed.
Original Abstract Submitted
A semiconductor memory device comprising a substrate including a cell array area and an extension area, a mold structure including, a plurality of gate electrodes sequentially stacked on the cell array area of the substrate and stacked in a stair shape on the extension area of the substrate, and a plurality of mold insulating films stacked alternately with the plurality of gate electrodes, a plurality of channel structures on the cell array area of the substrate, wherein each of the plurality of channel structures extends through the mold structure and intersects the plurality of gate electrodes, a plurality of cell contacts on the extension area of the substrate and respectively connected to the plurality of gate electrodes, a first interlayer insulating film on the mold structure so as to cover the plurality of channel structures and the plurality of cell contacts.
