18232894. INTEGRATED CIRCUIT DEVICE INCLUDING INTERCONNECTION STRUCTURE simplified abstract (Samsung Electronics Co., Ltd.)
Contents
INTEGRATED CIRCUIT DEVICE INCLUDING INTERCONNECTION STRUCTURE
Organization Name
Inventor(s)
Jeonghoon Ahn of Suwon-si (KR)
INTEGRATED CIRCUIT DEVICE INCLUDING INTERCONNECTION STRUCTURE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18232894 titled 'INTEGRATED CIRCUIT DEVICE INCLUDING INTERCONNECTION STRUCTURE
Simplified Explanation
The integrated circuit device described in the abstract includes an interconnection structure with multiple conductive layers and dielectric layers arranged in a specific configuration.
- The interconnection structure consists of an interlayer insulating layer with trenches, a first conductive layer in one trench, a second conductive layer in another trench, and a third conductive layer in a third trench.
- The second trench is spaced apart from the first trench, and the third trench is spaced apart from the second trench.
- A dielectric layer is formed between the first and second conductive layers, with a portion of the interlayer insulating layer between the second and third conductive layers.
- The first conductive layer has a greater width than the second conductive layer.
Potential applications of this technology:
- This technology can be used in the manufacturing of integrated circuits for various electronic devices such as smartphones, computers, and IoT devices.
- It can improve the performance and efficiency of integrated circuits by providing a more compact and optimized interconnection structure.
Problems solved by this technology:
- This technology helps in reducing signal interference and crosstalk between different conductive layers in an integrated circuit.
- It allows for better integration of multiple conductive layers in a limited space, improving the overall functionality of the integrated circuit.
Benefits of this technology:
- Enhanced performance and efficiency of integrated circuits.
- Improved signal integrity and reduced interference.
- Compact and optimized interconnection structure for better integration of multiple conductive layers.
Original Abstract Submitted
An integrated circuit device includes an interconnection structure that includes: an interlayer insulating layer arranged on a substrate and having a plurality of trenches; a first conductive layer formed inside a first trench of the plurality of trenches; a second conductive layer formed inside a second trench of the plurality of trenches, wherein the second trench is spaced apart from the first trench; a third conductive layer formed inside a third trench of the plurality of trenches, wherein the third trench is spaced apart from the second trench; and a dielectric layer formed between the first conductive layer and the second conductive layer, wherein a portion of interlayer insulating layer is disposed between the second conductive layer and the third conductive layer, and wherein a first width of the first conductive layer is greater than a second width of the second conductive layer.
