18231841. SEMICONDUCTOR DEVICES simplified abstract (Samsung Electronics Co., Ltd.)
SEMICONDUCTOR DEVICES
Organization Name
Inventor(s)
Myunggil Kang of Suwon-si (KR)
Younggwon Kim of Suwon-si (KR)
SEMICONDUCTOR DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 18231841 titled 'SEMICONDUCTOR DEVICES
Simplified Explanation
The semiconductor device described in the abstract includes an active region, multiple channel layers, a gate structure, and source/drain regions. The gate structure surrounds the channel layers and has upper and lower portions. The width of the channel layers is less than the width of the lower portions of the gate structure.
- Active region with multiple channel layers
- Gate structure surrounding channel layers
- Source/drain regions on one side of the gate structure
- Gate structure with upper and lower portions
- Channel layers with width less than lower portions of gate structure
Potential Applications
The technology described in the patent application could be used in:
- High-performance electronic devices
- Power management systems
- Communication devices
Problems Solved
This technology helps in:
- Enhancing device performance
- Improving power efficiency
- Increasing device reliability
Benefits
The benefits of this technology include:
- Higher speed and efficiency
- Lower power consumption
- Improved overall device performance
Potential Commercial Applications
The semiconductor device could be applied in:
- Mobile devices
- Computers and laptops
- Automotive electronics
Possible Prior Art
One possible prior art for this technology could be:
- Previous semiconductor devices with similar gate structures and channel layers
Unanswered Questions
How does this technology compare to existing semiconductor devices in terms of performance and efficiency?
This article does not provide a direct comparison with existing semiconductor devices in terms of performance and efficiency. Further research or testing may be needed to determine the specific advantages of this technology over existing solutions.
What are the potential challenges or limitations of implementing this technology in practical applications?
The article does not address the potential challenges or limitations of implementing this technology in practical applications. Factors such as manufacturing costs, scalability, and compatibility with existing systems could be important considerations that are not covered in the abstract. Further analysis would be necessary to assess these aspects of the technology.
Original Abstract Submitted
A semiconductor device, may include an active region extending in a first direction; a plurality of channel layers on the active region to be spaced apart from each other; a gate structure, surrounding the plurality of channel layers, respectively; and source/drain regions on the active region on at least one side of the gate structure, and contacting the plurality of channel layers, wherein the gate structure may include an upper portion on an uppermost channel layer among the plurality of channel layers and lower portions between each of the plurality of channel layers in a region vertically overlapping the plurality of channel layers, wherein a width of each of the plurality of channel layers in the first direction may be less than a width of lower portions of the gate structure, adjacent to the respective channel layers among the lower portions of the gate structure in the first direction.
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