18231760. MULTIFUNCTIONAL COLLIMATOR FOR CONTACT IMAGE SENSORS simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
MULTIFUNCTIONAL COLLIMATOR FOR CONTACT IMAGE SENSORS
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Hsin-Yu Chen of Hsinchu City (TW)
Yen-Chiang Liu of Hsinchu City (TW)
Jia-Syuan Li of Hsinchu City (TW)
You-Cheng Jhang of Hsinchu City (TW)
Shin-Hua Chen of Hsinchu City (TW)
LAVANYA Sanagavarapu of Hsinchu City (TW)
Han-Zong Pan of Hsinchu City (TW)
Chun-Peng Li of Hsinchu City (TW)
Chia-Chun Hung of Hsinchu City (TW)
Ching-Hsiang Hu of Hsinchu City (TW)
Wei-Ding Wu of Zhubei City (TW)
Jui-Chun Weng of Taipei City (TW)
Ji-Hong Chiang of Changhu City (TW)
Hsi-Cheng Hsu of Taichung City (TW)
MULTIFUNCTIONAL COLLIMATOR FOR CONTACT IMAGE SENSORS - A simplified explanation of the abstract
This abstract first appeared for US patent application 18231760 titled 'MULTIFUNCTIONAL COLLIMATOR FOR CONTACT IMAGE SENSORS
Simplified Explanation
The abstract describes a method for creating a cost-effective collimator structure for contact image sensors that filters out ambient infrared light to reduce noise. The structure includes a dielectric layer, a substrate, a series of via holes, and a conductive layer. The via holes are arranged in an array along the surface of the dielectric layer and extend through both the dielectric layer and the substrate. The conductive layer is applied to the surface of the dielectric layer and the sidewalls of the via holes, allowing the collimator to filter light within a specific range of wavelengths.
- The method provides a cost-effective way to fabricate a collimator structure for contact image sensors.
- The structure filters out ambient infrared light to reduce noise.
- The structure includes a dielectric layer, a substrate, via holes, and a conductive layer.
- The via holes are arranged in an array along the surface of the dielectric layer and extend through both the dielectric layer and the substrate.
- The conductive layer is applied to the surface of the dielectric layer and the sidewalls of the via holes.
- The conductive layer allows the collimator to filter light within a specific range of wavelengths.
Potential Applications
This technology can be applied in various fields where contact image sensors are used, such as:
- Document scanning
- Barcode scanning
- Biometric authentication
- Optical character recognition (OCR)
- Image processing
Problems Solved
This technology addresses the following problems:
- Ambient infrared light causing noise in contact image sensors
- Expensive fabrication methods for collimator structures
- Inefficient filtering of light in contact image sensors
Benefits
The benefits of this technology include:
- Cost-effective fabrication method for collimator structures
- Reduction of noise caused by ambient infrared light
- Improved filtering of light in contact image sensors
- Enhanced performance and accuracy in applications using contact image sensors
Original Abstract Submitted
Disclosed is a cost-effective method to fabricate a multifunctional collimator structure for contact image sensors to filter ambient infrared light to reduce noises. In one embodiment, an optical collimator, includes: a dielectric layer; a substrate; a plurality of via holes; and a conductive layer, wherein the dielectric layer is formed over the substrate, wherein the plurality of via holes are configured as an array along a lateral direction of a first surface of the dielectric layer, wherein each of the plurality of via holes extends through the dielectric layer and the substrate from the first surface of the dielectric layer to a second surface of the substrate in a vertical direction, and wherein the conductive layer is formed over at least one of the following: the first surface of the first dielectric layer and a portion of sidewalls of each of the plurality of via holes, and wherein the conductive layer is configured so as to allow the optical collimator to filter light in a range of wavelengths.
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hsin-Yu Chen of Hsinchu City (TW)
- Yen-Chiang Liu of Hsinchu City (TW)
- June-Jie Chiou of Hsi (TW)
- Jia-Syuan Li of Hsinchu City (TW)
- You-Cheng Jhang of Hsinchu City (TW)
- Shin-Hua Chen of Hsinchu City (TW)
- LAVANYA Sanagavarapu of Hsinchu City (TW)
- Han-Zong Pan of Hsinchu City (TW)
- Chun-Peng Li of Hsinchu City (TW)
- Chia-Chun Hung of Hsinchu City (TW)
- Ching-Hsiang Hu of Hsinchu City (TW)
- Wei-Ding Wu of Zhubei City (TW)
- Jui-Chun Weng of Taipei City (TW)
- Ji-Hong Chiang of Changhu City (TW)
- Hsi-Cheng Hsu of Taichung City (TW)
- G02B27/30
- G02B5/20
- G02B26/00
- H01L27/146
- H01L31/0216
- G06V40/13